POWEREX QIQ0645002 Datasheet
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module
600V 450A IGBT / 600V 450A Fast Diode
QIQ0645002
Description:
Powerex Low Side Chopper
IGBT Module designed specially for
customer applications. The modules
are isolated for easy mounting with
other components on a common
heatsink.
Features:
Low Drive Requirement
Dim Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14+0.04/-0.02 29+1.0/-0.5
D
E
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
3.66±0.01 93.0±0.25
1.88±0.01 48.0±0.25
Welding Power Supplies
Dim Inches Millimeters
K 0.55 14.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Low V
Super Fast Diode
(3) F Series 150A 600V
Chips per IGBT Switch
(6) F Series 150A 600V
Chips per Diode
Isolated Baseplate for Easy
Heat Sinking
Low Thermal Impedance
Isolated Material: DBC Alumina
Applications:
Choppers
Welding Power Supplies
CE(sat)
Preliminary Page 1 7/25/2002
QIQ0645002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module
600V 450A IGBT / 600V 450A Fast Diode
Maximum Ratings, Tj=25°
°C unless otherwise specified
°°
Ratings Symbol QIQ0645002 Units
Collector Emitter Voltage V
Gate Emitter Voltage V
Collector Current (T
=25°C)
C
Peak Collector Current (Tj≤150°C)
Diode Average Forward Current 180° Conduction, TC=70°C
600 Volts
CES
GES
I
450 Amperes
C
I
900* Amperes
CM
I
450 Amperes
FM
±20
Volts
Peak Diode Forward Current IFM 1800 Amperes
Diode I2t for Fusing for One Cycle t=8.3mS I2t 121500 A2sec
Power Dissipation Pd 1650 Watts
Junction Temperature Tj -40 to 150
Storage Temperature T
-40 to 125
stg
°C
°C
Mounting Torque, M6 Terminal Screws - 40 In-lb
Mounting Torque, M6 Mounting Screws - 40 In-lb
Module Weight (Typical) - 400 Grams
V Isolation V
2000 Volts
RMS
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Static Electrical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG V
Diode Forward Voltage VFM I
I
I
°C unless otherwise specified
°°
VCE=V
CES
VGE=V
GES
IC=45mA, VCE=10V 5.0 6.0 7.0 Volts
GE(th)
IC=450A, VGE=15V - 1.6 2.2 Volts
CE(sat)
=450A, VGE=15V,
C
T
CC
=450A, VGE=15V
I
C
=0V - - 1.0 mA
CES VGE
=0V - - 60
GES VCE
=125°C
j
=300V,
=900A - 2.0 2.6 Volts
F
=450A - 1.7 - Volts
F
=300A - 1.3 - Volts
F
µA
- 1.6 - Volts
- 2790 - nC
Dynamic Electrical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time tr - - TBD ns
Turn- off Delay Time t
Fall Time tf
Diode Reverse Recovery Time trr - - 150 ns
Diode Reverse Recovery Charge Qrr
Thermal and Mechanical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
(Thermal Grease Applied)
°C unless otherwise specified
°°
- - 123 nF
ies
- - 8.1 nF
oes
res
- - TBD ns
d(on)
- - TBD ns
d(off)
di
R
θJC
R
θJC
R
θCF
=0V
V
GE
=10V
V
CE
f=1MHz
V
=300V
CC
=450A
I
C
V
GE1=VGE2
/dt=-1800A/µS
F
=15V
=4.2Ω
R
G
I
=900A
F
°C unless otherwise specified
°°
- - 4.5 ns
- - TBD ns
- 8.4 -
Per IGBT - 0.10 TBD
Per Diode - 0.085 TBD
Per Module - 0.02 -
µC
°C/W
°C/W
°C/W
Preliminary Page 2 7/25/2002
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