POWEREX QID0630006 Datasheet
Powerex Inc., 200 Hill i s St., Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series
Hermetic Module
300 Amperes/600 Volts
Description:
QID0630006
Powerex IGBT Hermetic modules are
designed for use in switching
applications. Each Module consists of
two IGBT transistors in a half bridge
configuration with each transistor
having a reverse connected super fast
recovery free wheel diode. All
components are located in a
hermetically sealed chamber and are
electrically isolated from the heat
sinking base plate, offering simplified
system assembly and thermal
management.
Features:
♦ Low Drive Power
♦ Low V
CE(sat)
♦ Discrete Fast Recovery Free-Wheel
Diode
♦ High Frequency Operation (20-
25kHz)
♦ Isolated Base plate for Easy Heat
sinking
♦ Fully Hermetic Package
♦ Package Design Capable of Use at
High Altitudes
Schematic:
Applications:
♦ AC Motor Control
♦ Motion/Servo Control
♦ Air Craft Applications
Ordering Information:
Contact Powerex Custom Modules
Page 1 4/11/2001
Powerex Inc., 200 Hill i s St., Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series
Hermetic Module
300 Amperes/600 Volts
QID0630006
Maximum Ratings, Tj=25°°°°C unless otherwise specified
Ratings Symbol Units
Collector Emitter Voltage V
Gate Emitter Voltage V
600 Volts
CES
GES
±20
Volts
Collector Current IC 300 Amperes
Peak Collector Current ICM 600* Amperes
Diode Forward Current IFM 300 Amperes
Diode Forward Surge Current IFM 600* Amperes
Power Dissipation Pd 1100 Watts
V Isolation V
2500 Volts
RMS
Static Electrical Characteristics, Tj=25°°°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
V
Total Gate Charge QG V
Diode Forward Voltage VFM I
V
CES
V
GES
I
GE(th)
I
CE(sat)
I
CE(sat)
CE=VCES
=0V 0.5
CE
=30mA,
C
V
=10V
CE
=300A,
C
V
=15V
GE
=300A,
C
V
=15V,
GE
=150°C
T
j
=300V,
CC
I
=300A,
C
V
=15V
GS
=300A,
E
V
=0V
GS
Min Typ Max Units
1.0 mA
µA
4.5 6.0 7.5 Volts
2.1 2.8 Volts
2.15 Volts
900 nC
2.8 Volts
Dynamic Electrical Characteristics, Tj=25°°°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time tr I
Turn off delay time t
V
ies
V
oes
f=1MHz 6 nF
res
V
d(on)
V
d(off)
=0V 30 nF
GE
=10V 10.5 nF
CE
=300V 350 nS
CC
=300A 600 nS
C
GE1=VGE2
V
Fall Time tf
R
G
=2.1Ω
Diode Reverse Recovery Time trr IE=300A 150 nS
Diode reverse Recovery Charge Qrr diE/dt=-
600A/µS
Min Typ Max Units
=15
350 nS
300 nS
0.81
µC
Thermal and Mechanical Characteristics, Tj=25°°°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
R
θJC
R
θJC
Per IGBT 0.11
Per Diode 0.24
Min Typ Max Units
°C/W
°C/W
Page 2 4/11/2001
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