POWEREX QIC1208001 Datasheet
QIC1208001
Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual AC Switch IGBT Module
1200V 75A
Description:
Powerex Dual AC Switch IGBT Module designed
specially for customer applications.
Features:
• Isolated Mounting
• Low Drive Requirement
• Internal Series Gate Resistors
• Low Vce(sat)
• Rectifier Grade Low Vf Diodes
Dim Inches Millimeters
A 3.70 94.0
B 3.150 K0.01 80.0 K0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max
E 0.90 23.0
F 0.83 21.2
C1
E2
G 0.71 18.0
H 0.67 17.0
J 0.63 16.0
K 0.51 13.0
L 0.47 12.0
M 0.30 7.5
N 0.28 7.0
P 0.256 Dia. Dia. 6.5
Q 0.26 6.5
R --- M5
S 0.16 4.0
C2E1
E1 G1
Preliminary Page 1 3/13/98
G2E2
QIC1208001
Vce(sat) (Volts)
Vf (Volts)
Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual AC Switch IGBT Module
1200V 75A
Electrical Charactistics
Characteristics (Each IGBT or Each Diode)
Symbol Parameter Min Typ. Max. Units
IGBT
V
CES
V
GES
I
GES
I
CES
V
GE(th)
C
IES
C
OES
C
RES
R
th(j-c)
DIODE
R
th(j-c)
Collector Emitter Voltage (G-E SHORT) 1200 V
Gate Emitter Voltage K20 V
Gate Leakage Current VGE=V
GES VCE
=0 0.5 uA
Collector-Cutoff Current VCE=600V VGE=0 1 mA
Gate Emitter Threshold Voltage IC=7.5mA VCE=10V 4.5 6.0 7.5 V
Input Capacitance VCE=10V VGE=0 f=1Mhz 15 nF
Output Capacitance VCE=10V VGE=0 f=1Mhz 5.3 nF
Reverse Transfer Capacitance VCE=10V VGE=0 f=1Mhz 3 nF
Thermal Impedance Junction to case (Per IGBT) 0.21 C/W
Thermal Impedance Junction to case (Per Diode) 0.30 C/W
PACKAGE
Vrms V Isolation 2500 V
Module weight 190 g
Mounting torque M6 Mounting screw 4 Nm
Terminal torque, M6 Terminal Screw 6 Nm
R
th(jc-s)
Thermal Impedance Case to Sink 0.08 C/W
Typical IGBT Collector-Emitter Saturation Voltage
5
4
3
2
1
25C
125C
1.5
1.2
0.9
0.6
0.3
Typical Diode Vf
25C
125
Preliminary Page 2 3/13/98
0
0 25 50 75 100 125 150
Current (Amperes)
0
0 25 50 75 100 125 150
Current (Amperes)
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