POWEREX QIC0620003 Datasheet
QIC0620003
p
p
Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsy l vania 15697-1800 (724) 925-7272
200 Amp/600 Volts
QIC0620003
Dual IGBT Module
Common Emitter
200 Am
eres / 600 Volts
Dual IGBT Common Emitter Module
200 Am
/600 Volts
Description:
Powerex Fast Recovery Diode
Modules are designed for use in
applications requiring fast switching.
The modules are isolated for easy
mounting with other components on a
common heatsink.
Features:
Isolated Mounting
Isolation Material - DBC Alumina
Low Drive Power
Internal Series Gate Resistors
Super-Fast FWD (110ns)
Copper Baseplate
2500 V isolating voltage
Dimensions Inches Millimeters
A 3.70 94
B 1.34 34
C 1.18 30
D 3.15 80
E 0.67 17
F 0.28 6.99
G 0.67 17.1
H 0.91 23
J 0.91 23
K M6X1.0 M6X1.0
L DIA 0.256 DIA. 6.5
QIC0620003
p
Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsy l vania 15697-1800 (724) 925-7272
200 Amp/600 Volts
Dual IGBT Common Emitter Module
200 Am
/600 Volts
Maximum Ratings, Tj=25
C unless otherwise specified
°°°°
Ratings
Collector Emitter Voltage V
Gate Emitter Volt age V
Collector Current IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Diode Forward Current IF 50 Amperes
Diode Forward Surge Current IFM 500 Amperes
Junction Temperature Tj -40 to 150
Storage Temperature T
Mounting Torque, M6 Terminal Screws - 40 In-lb
Mounting Torque, M6 Mounting Screws - 40 In-lb
Module Weight (Typical) - 200 Grams
V Isolation V
*
Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj=25
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V ol tage V
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG V
Diode Forward Voltage VFM I
Symbol QIC0620003 Units
600 Volts
CES
GES
-40 to 125
stg
2500 Volts
RMS
C unless otherwise specified
°°°°
VCE=V
CES
VGE=V
GES
IC=20mA, VCE=10V 4.5 6.0 7.5 Volts
GE(th)
IC=200A, VGE=15V - 2.1 2.8 Volts
CE(sat)
=200A, VGE=15V,
C
T
CC
I
=200A, VGS=15V
C
=50A, VGS=0V - - 2.8 Volts
F
=0V - - 1.0 mA
CES VGE
=0V - - 0.5 µA
GES VCE
=150°C
j
=300V,
20 Volts
±
C
°
C
°
- 2.15 - Volts
- 600 - nC
Dynamic Electrical Characteristics, Tj=25
Characteristic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time tr - - 550 ns
Turn- off Delay Time t
Fall Time tf
Diode Reverse Recovery Time trr - - 110 ns
Diode Reverse Recovery Charge Qrr
Thermal and Mechanical Characteristics, Tj=25
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resis t ance, Thermal Grease
Applied
Symbol Test Conditions Min. Typ. Max. Units
C unless otherwise specified
°°°°
- - 20 nF
ies
- - 7 nF
oes
res
- - 200 ns
d(on)
- - 300 ns
d(off)
Per IGBT - 0.14 TBD °C/W
JC
θ
Per Diode - 0.70 TBD °C/W
JC
θ
R
Per Module - - 0.075 °C/W
CF
θ
V
=0V
GE
V
=10V
CE
f=1MHz
=300V
V
CC
I
=200A
C
V
GE1=VGE2
di
F
C unless otherwise specified
°°°°
=15V
R
=3.1Ω
G
I
=50A
F
/dt=-100A/µS
- - 4 ns
- - 300 ns
- 0.37 - µC
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