Powerex PM75B4L1C060 Data Sheet

PM75B4L1C060

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A
D

B

C

S (19 TYP.)

F

E

G

G

G

G

1 5 9 13

B P N U V W

L L

F

F

G

G

G

G

G

LF

T

F

G

G

G

H (2 TYP.)

G

G

J

K

Q

LL

N

P

M

R

TERMINAL

CODE

F

V

NC NC

O

NC

1.5k

VN1V

C

V

U

V

V

V

VPC

N

IN

U

O

F

CC

V

OT

SIGND GND

OUT

NC NCNC NC

N

O

IN

F

CC

V

OT

SIGND GND

OUT

FO

V

V

P

VP1

O

IN

F

OT

SIGND GND

OUT

VWNB

U

UPC

FO

U

V

P

UP1

1.5k1.5k

O

IN

F

CC

V

OT

SIGND GND

OUT

PU

1 V

UPC

2 UFO

3 UP

4 VUP1

5 VVPC

6 VFO

7 VP

VP1

8 V

9 NC

10 NC

11 NC

12 NC

CC

V

13 V

14 VN1

15 NC

16 UN

17 VN

18 NC

19 FO

NC

Outline Drawing and Circuit Diagram

Dim. Inches Millimeters

A 3.54 90.0
B 1.97 50.0
C 0.98 25.0
D 3.15 80.0
E 0.20 5.0
F 0.39 10.0
G 0.08 2.0
H 0.17 Dia. 4.3 Dia.
J 0.81 20.5
K 0.91 23.0

Dim. Inches Millimeters

L 0.47 12.0
M 0.012 0.3
N 0.57 14.6
P 0.26 6.7
Q 0.02 0.5
R 0.56 14.2
S 0.02 Sq. 0.5 Sq.
T 0.08 2.0
U 0.51 13.0
V 0.65 16.5

Photo Voltaic IPM

H-Bridge
75 Amperes/600 Volts

Description:

Powerex Intellimod™ Photo
Voltaic Intelligent Power Modules
are isolated base modules
designed for single phase power
switching applications. Built-in
control circuits provide optimum
gate drive and protection for the
IGBT and free-wheel diode
power devices.

Features:

£ Complete Output Power
Circuit

£ Gate Drive Circuit
£ Protection Logic

– Short Circuit
– Over Temperature
Using On-chip
Temperature Sensing
– Under Voltage
£ Low Loss Using Full Gate
CSTBT IGBT Chip

Applications:

£ PV Inverters
£ PV UPS
£ PV Power Supplies

Ordering Information:

Example: Select the complete
part number from the table below

-i.e. PM75B4L1C060 is a 600V,
75 Ampere PV-IPM.

Type Current Rating V
Amperes Volts (x 10)

PM 75 60

CES

03/11 Rev. 0

1

Powerex, Inc ., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

PM75B4L1C060
Photo Voltaic IPM
H-Bridge

75 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol PM75B4L1C060 Units

Power Device Junction Temperature Tj -20 to 150 °C

Storage Temperature T

-40 to 125 °C

stg

Mounting Torque, M4 Mounting Screws (Typical) — 15 in-lb

Module Weight (Typical) — 135 Grams

Supply Voltage, Surge (Applied between P-N) V

Operation of Short Circuit Protections V

CC(surge)

CC(prot.)

500 Volts

450 Volts

(Applied between P-N, VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start)

Isolation Voltage (60Hz, Sinusoidal, RMS, Charged Part to Base, AC 1 Minute) V

2500 Volts

ISO

Inverter Part

Collector-Emitter Voltage (VD = 15V, V

Collector Current (TC = 25°C) IC 75 Amperes

Collector Current (Pulse) I

Total Power Dissipation (TC = 25°C) P

Emitter Current (TC = 25°C, FWDi Current) IE 75 Amperes

Emitter Current (Pulse, FWDi Current) I

= 15V) V

CIN

600 Volts

CES

150 Amperes

CRM

201 Watts

tot

150 Amperes

ERM

Control Part

Supply Voltage (Applied between V

Input Voltage (Applied between UP-V

UP1-VUPC

UPC

Fault Output Supply Voltage VFO 20 Volts

(Applied between UFO-V

UPC

, VFO-V

VPC

Fault Output Supply Current (Sink Current at UFO, VFO, FO Terminals) IFO 20 mA

, V

VP1-VVPC

, VP-V

VPC

, FO-VNC)

, VN1-VNC) VD 20 Volts

, UN- VN- WN-Br-VNC) V

20 Volts

CIN

2

03/11 Rev. 0

Powerex, Inc ., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

PM75B4L1C060
Photo Voltaic IPM
H-Bridge

75 Amperes/600 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Inverter Part

Collector-Emitter Saturation Voltage V

Pulsed, Tj = 25°C

VD = 15V, IC = 75A, V

Pulsed, Tj = 125°C

Emitter-Collector Voltage VEC IE = 75A, VD = 15V, V

Switching Times ton 0.1 0.5 1.2 µs

trr VD = 15V, V

t

t

t

Collector-Emitter Cutoff Current I

VCE = V

V

VD = 15V, IC = 75A, V

CE(sat)

CIN

VCC = 300V, IC = 75A, — 0.15 0.3 µs

C(on)

Tj = 125°C, Inductive Load — 1.1 2.0 µs

off

— 0.2 0.4 µs

C(off)

VCE = V

CES

, VD = 15V, V

CES

= 15V, Tj = 125°C

CIN

, VD = 15V, — — 10 mA

CES

= 0V, — 2.2 2.7 Volts

CIN

= 0V, — 2.2 2.7 Volts

CIN

= 15V — 2.4 3.3 Volts

CIN

= 0 ↔ 15V — 0.1 0.2 µs

= 15V, Tj = 25°C — — 1.0 mA

CIN

Control Part

Circuit Current ID VD = 15V, V

VD = 15V, V

Input ON Threshold Voltage V

Input OFF Threshold Voltage V

Applied between UP-V

th(on)

VP-V

th(off)

VPC

Short Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 112 — — Amperes

Short Circuit Current Delay Time t

VD = 15V — 0.2 — µs

off(SC)

Over Temperature Protection OT Trip Level 135 — — °C

(Detect Temperature of IGBT) OT

Hysteresis — 20 — °C

(hys)

Supply Circuit Under-voltage Protection UVt Trip Level 11.5 12.0 12.5 Volts

(-20°C ≤ Tj ≤ 125°C) UVr Reset Level — 12.5 — Volts

Fault Output Current I

I

VD = 15V, VFO = 15V — — 0.01 mA

FO(H)

VD = 15V, VFO = 15V — 10 15 mA

FO(L)

Fault Output Pulse Width*2 tFO VD = 15V 1.0 1.8 — ms

*2 Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower devide operate to protect it.
Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level.

= 15V, VN1-VNC — 6.5 12 mA

CIN

CIN

= 15V, V

*P1-V*PC

— 1.6 4 mA

, 1.2 1.5 1.8 Volts

UPC

, UN- VN- WN-Br-VNC 1.7 2.0 2.3 Volts

03/11 Rev. 0

3

Powerex, Inc ., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

PM75B4L1C060
Photo Voltaic IPM
H-Bridge

75 Amperes/600 Volts

Thermal Characteristics, Tj = 25°C unless otherwise specied

Characteristic Symbol Condition Min. Typ. Max. Units

Junction to Case Thermal Resistance R

R

Contact Thermal Resistance R

Inverter IGBT (Per 1 Element)*1 — — 0.62 °C/Watt

th(j-c)Q

Inverter FWDi (Per 1 Element)*1 — — 1.06 °C/Watt

th(j-c)D

Case to Fin (Per 1 Element)*1, — 0.060 — °C/Watt

th(c-f)

Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units

Inverter Supply Voltage VCC Applied across P-N Terminals ≤450 Volts

Control Supply Voltage*3 VD Applied between V

V

Input ON Voltage V

Input OFF Voltage V

PWM Input Frequency f

Applied between UP-V

CIN(on)

VP-V

CIN(off)

Using Application Circuit Input Signal of IPM, ≤20 kHz

PWM

VP1-VVPC

, UN- VN- WN-Br-VNC ≥9.0 Volts

VPC

UP1-VUPC

, VN1-VNC

3-Phase Sinusoidal PWM VVVF Inverter

Arm Shoot-through Blocking Time t

*1 When using this value, R
*3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak.

should be measured just under the chips.

th(s-a)

For IPMs Each Input Signals ≥2.0 µs

DEAD

, 15.0 ± 1.5 Volts

, ≤0.8 Volts

UPC

4

03/11 Rev. 0