POWEREX GCU08AA-130 Datasheet

GCU08AA-130

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT

GCU08AA-130

HIGH POWER INVERTER USE

PRESS PACK TYPE

● Symmetrical GCT

● GCT and Gate driver are connected

● I

TQRM

● I

T(AV) Average on-state current...................... 330A

● V

Repetitive controllable on-state current

DRM

Repetitive peak off-state voltage

............ 800A

.................. 6500V

APPLICATION

Inverters, DC choppers, Induction heaters, DC to DC converters.

OUTLINE DRAWING Dimensions in mm

(208)

(104)

(160)

(250)

(165)

(80)(85)

(48) (46.5)

(46.5) (48)

G

K

G

K

TPG

TPX

LED4

LED3

LED2

LED1

(120)

K

φ47±0.2

G

K

DE2

DE1

G

K

G

K

G

(140)

(20)

9MAX

80±0.5

(5)

40MAX

160MIN

(80)

6±0.5 6±0.5

20MAX

6±0.5 6±0.5

φ47±0.2

10.1±0.9

26.2±0.3

A

14.5±1.3

10MIN

A PART MAGNIFICATION

(1.6)

(20)

(13.7)

Mar. 2001

GCT PART (Type name : FGC800A-130DS)
MAXIMUM RATINGS

Symbol

V

RRM

VRSM
VDRM
VDSM
VLTDS

Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage

Parameter

GK = –2V

V

GK = –2V

V
V

GK = –2V, λ = 100 Fit

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT

GCU08AA-130

HIGH POWER INVERTER USE

PRESS PACK TYPE

Conditions

—
—

Voltage class

6500
6500
6500
6500
3600

Unit

V
V
V
V
V

Symbol Parameter Conditions

V

ITQRM

T(RMS)

I
IT(AV)
ITSM

2

I

t

diT/dt
VFGM

VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg

—
—

Repetitive controllable on-state current
RMS on-state current

Average on-state current
Surge on-state current
Current-squared, time integration

Critical rate of rise of on-state current
Peak forward gate voltage

Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required

Weight

DM = 3/4 VDRM, VD = 3000V, LC = 0.3µH, VRG = 20V

T

j = 25/115°C, With GU-D08 (see Fig. 1, 3)

Applied for all conduction angles
f = 60Hz, sinewave θ = 180°, T

One half cycle at 60Hz, T
V

D = 3000V, IT = 800A, CS= 0.1µF, RS= 10Ω
j = 25/115°C, f = 60Hz, With GU-D08 (see Fig. 1,2 )

T

j = 115°C Start

(Recommended value 13kN)
Typical value

ELECTRICAL CHARACTERISTICS

Symbol Parameter Conditions

TM

V
IRRM
IDRM
IGRM

d

v/dt

tgt
td

Eon
ts

E

off

QRR
Erec
IGT
VGT
Rth(j-f)

On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current

Critical rate of rise of off-state voltage
Turn-on time

Delay time
Turn-on switching energy

Storage time
Turn-off switching energy

Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
Thermal resistance

T = 800A, Tj = 1 15°C

I
V

RM = 6500V, Tj = 115°C

V

DM = 6500V, VGK = –2V, Tj = 115°C
RG = 21V, Tj = 115°C

V
V

D = 3000V, VGK = –2V, Tj = 115°C

(Expo. wave) (see Fig. 4)
I

T = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 115°C

C

S= 0.1µF, RS = 10Ω

With GU-D08 (see Fig. 1, 2)

T = 800A, VDM = 3/4 VDRM, VD = 3000V

I
C

S= 0.1µF, RS= 10Ω, VRG = 20V, Tj = 115°C

With GU-D08 (see Fig. 1, 5)
V

R = 3000V, I T = 800A, di/dt = 1000A/µs

C

S= 0.1µF, RS = 10Ω, Tj = 115°C (see Fig. 5, 6)

DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin

f = 55°C

Ratings

800
520

330

4.8

4

9.6 × 10
1000

10

21
500
800

5

17
100
120

–20 ~ +115
–20 ~ +150

11.1 ~ 15.8
530

Limits

Min Typ Max

—
—
—
—

3000

—
—

—
—

—
—

—
—
—
—

—
—
—

150
100

—
—
—

—
—
—

—
—

1650
—
—
—
—

0.025

6.8

50

—

5.0

1.0

1.6

3.0

6.0

5.0

0.5

1.5

Unit

A
A

A

kA

2

A

A/µs

V
V
A

A
kW
kW

W
W

°C
°C

kN

g

Unit

V
mA
mA
mA

V/µs

µs
µs

J/P

µs

J/P

µ

C

J/P

A

V

°C/W

s

Mar. 2001

Fig. 1 Turn-on and Turn-off waveform

τ

V

D

dV/dt0.632VD/τ

0.632V

D

t

V

D

t

d

t

gt

diG/d

t

V

RG

I

GM

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT

GCU08AA-130

HIGH POWER INVERTER USE

PRESS PACK TYPE

I

T

t

s

I

G

di

I

GQ/dt

GQ

V

D

td ; 0VG ~ 0.9V
t

gt

; 0VG ~ 0.1V
diG/dt ; 0.1IGM ~ 0.9I
ts ; 0VG ~ 0.9I
diGQ/dt ; 0.1IGQ ~ 0.9I

V

RG

D

D

GM

T

GQ

Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit

Fig. 4 dv/dt test waveform

(With clamp circuit)

L

Rs

V

D

Cs

GCT

V

D

L(line)

L(load)

GCT

FWDi

Lc

CDi

Cc

Rc

Fig. 5 Turn-off and Recovery test circuit Fig. 6 Reverse recovery waveform

V

D

L (line)

L (load)

GCT1

GCT2

Rs

Cs

Rs

Cs

QRR t

i/dt

50%I

T

I

T

d

t

rr

0

I

RM

90%I

rr × IRM

(0 ~ 50%IT)

50%I

RM

RM

GCT1 : For turn-off test
GCT2 : For Recovery test

/2

Mar. 2001