MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
● 4V DRIVE
DSS ............................................................................... –30V
● V
● r
DS (ON) (MAX) ............................................................. 20mΩ
D.........................................................................................–8A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.0
4.4
➃➀
➀➁➂
➄➅➆➇
1.8 MAX.
SOURCE
GATE
➃
DRAIN
5.0
0.4
1.27
➀➁➂
➃
➄➅➆➇
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
–30
±20
–8
–56
–8
–2.1
–8.4
2.0
–55 ~ +150
–55 ~ +150
0.07
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –8A, VGS = –10V
ID = –4A, VGS = –4V
ID = –8A, VGS = –10V
ID = –8A, VDS = –10V
VDS = –10V , VGS = 0V , f = 1MHz
VDD = –15V, ID = –4A, VGS = –10V, RGEN = RGS = 50Ω
IS = –2.1A, VGS = 0V
Channel to ambient
IS = –2.1A, dis/dt = 50A/µs
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–2.0
14
26
0.112
19
3650
900
385
30
55
250
105
–0.77
—
100
—
±0.1
–0.1
–2.5
20
37
0.160
—
—
—
—
—
—
—
—
–1.20
62.5
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
DRAIN CURRENT ID (A)
–50
–40
–30
–20
–10
VGS = –10V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
–8V
(TYPICAL)
–6V –5V
C (°C)
Tc = 25°C
Pulse Test
PD = 2W
–4V
–3V
MAXIMUM SAFE OPERATING AREA
2
–10
–7
–5
–3
–2
1
–10
–7
–5
–3
–2
0
–10
–7
–5
–3
Tc = 25°C
–2
Single Pulse
–1
–10
–7
DRAIN CURRENT ID (A)
–5
–3
–2
–2
–10
–10
–2
–2–3 –5–7
–10
–1
–2–3 –5–7
–10
0
–2–3 –5–7
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
–16
VGS =
–10V
–4V
–5V
–6V
–8V
–12
–8
–4
DRAIN CURRENT ID (A)
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
1
–2–3 –5–7
–10
DS (V)
Tc = 25°C
Pulse Test
–2.5V
PD = 2W
tw =
1ms
10ms
100ms
DC
–3V
–10
2
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998