POWEREX FY7BCH-02 Datasheet
MITSUBISHI Nch POWER MOSFET
FY7BCH-02
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH-SPEED SWITCHING USE
FY7BCH-02
● 2.5V DRIVE
DSS ..................................................................................20V
● V
● r
DS (ON) (MAX) ............................................................. 27mΩ
D........................................................................................... 7A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.4
4.4
➃➀
➀➇
➁➂➅➆
➃➄
➄
1.1
DRAIN
SOURCE
GATE
➇
➅➆
3.0
0.275
0.65
➀
➃
➁➂
TSSOP8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
20
±10
7
49
7
1.5
6.0
1.6
–55 ~ +150
–55 ~ +150
0.035
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
I
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
D = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 4V
ID = 3.5A, VGS = 2.5V
ID = 7A, VGS = 4V
ID = 7A, VDS = 10V
V
DS = 10V , VGS = 0V, f = 1MHz
DD = 10V , ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω
V
IS = 1.5A, VGS = 0V
Channel to ambient
IS = 1.5A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY7BCH-02
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
20
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.7
20
29
0.140
15
950
350
260
20
65
135
130
0.75
—
50
—
±0.1
0.1
1.3
27
40
0.189
—
—
—
—
—
—
—
—
1.1
78.1
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Sep.1998
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