POWEREX FY6BCH-02 Datasheet
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH-SPEED SWITCHING USE
FY6BCH-02
● 2.5V DRIVE
DSS ..................................................................................20V
● V
● r
DS (ON) (MAX) ............................................................. 30mΩ
D........................................................................................... 6A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.4
4.4
➃➀
➀➇
➁➂➅➆
➃➄
➄
1.1
DRAIN
SOURCE
GATE
➇
➅➆
3.0
0.275
0.65
➀
➃
➁➂
TSSOP8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
20
±10
6
42
6
1.5
6.0
1.5
–55 ~ +150
–55 ~ +150
0.035
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 6A, VGS = 4V
ID = 6A, VDS = 10V
VDS = 10V , VGS = 0V, f = 1MHz
VDD = 10V, ID = 3A, VGS = 4V, R GEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to ambient
IS = 1.5A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
25
32
0.15
13.0
800
280
200
20
55
90
100
—
—
50
—
±0.1
0.1
1.3
30
40
0.18
—
—
—
—
—
—
—
—
1.10
83.3
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
16
12
8
4
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
(TYPICAL)
3V
2.5V
C (°C)
VGS = 5V
4V
TC = 25°C
Pulse Test
PD = 1.5W
2V
1.5V
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
TC = 25°C
–1
10
Single Pulse
7
5
2
0
10
357 2 10
357 2 10
1
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V
4V
8
3V
2.5V
2V
6
4
2
DRAIN CURRENT ID (A)
0
0 0.1 0.2 0.3 0.4 0.5
tw = 10µs
100µs
1ms
10ms
100ms
DC
357
DS (V)
PD = 1.5W
TC = 25°C
Pulse Test
1.5V
2
2
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
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