MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
FY10AAJ-03A
● 4V DRIVE
DSS ..................................................................................30V
● V
● r
DS (ON) (MAX) ..........................................................13.5mΩ
D.........................................................................................10A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.0
4.4
➃➀
➀➁➂
➄➅➆➇
1.8 MAX.
SOURCE
GATE
➃
DRAIN
5.0
0.4
1.27
➄➅➆➇
➃
➀➁➂
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
30
±20
10
70
10
2.3
9.2
2.0
–55 ~ +150
–55 ~ +150
0.07
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 5A, VGS = 4V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 10V , VGS = 0V, f = 1MHz
VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 2.3A, VGS = 0V
Channel to ambient
IS = 2.3A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
9.5
15
0.095
20
1800
650
280
25
45
125
90
0.75
—
45
—
±0.1
0.1
2.0
13.5
20.0
0.135
—
—
—
—
—
—
—
—
1.10
62.5
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
50
40
30
(TYPICAL)
VGS = 10V
8V
6V
C (°C)
TC = 25°C
Pulse Test
3.5V
4V
MAXIMUM SAFE OPERATING AREA
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
–1
10
7
TC = 25°C
5
Single Pulse
3
2
0
2 10
357 2 10
357 2 10
1
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
20
4V
3.5V
6V
8V
VGS = 10V
16
12
tw = 100µs
1ms
10ms
100ms
DC
2
357 2 10
357 2
DS (V)
TC = 25°C
Pulse Test
3
3V
20
10
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 2W
3V
8
4
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 2W
Sep.1998