POWEREX FX6ASJ-3 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX6ASJ-3
HIGH-SPEED SWITCHING USE
FX6ASJ-3
4V DRIVE
•
VDSS ............................................................ –150V
•
rDS (ON) (MAX) ................................................0.53Ω
•
ID ..................................................................... –6A
•
Integrated Fast Recovery Diode (TYP.) ........ 100ns
•
OUTLINE DRAWING Dimensions in mm
0.9 max
2.3
1
4
2.3
1
6.5
5.0 ± 0.2
1.0 max
2
3
2
1.0
2.3
10 max
5.5 ± 0.2
2.3 min 1.5 ± 0.2
3
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
4
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 100µH
Typical value
–150
±20
–6
–24
–6
–6
–24
35
–55 ~ +150
–55 ~ +150
0.26
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –3A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –3A, VGS = –10V, RGEN = RGS = 50Ω
IS = –3A, VGS = 0V
Channel to case
IS = –6A, dis/dt = 100A/µs
MITSUBISHI Pch POWER MOSFET
FX6ASJ-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.41
0.45
–1.23
7.9
2420
152
69
14
18
156
58
–1.0
—
100
—
±0.1
–0.1
–2.0
0.53
0.59
–1.59
—
—
—
—
—
—
—
—
–1.5
3.57
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–20
–16
–12
VGS = –10V
(TYPICAL)
–6V
–5V
C (°C)
–4V
TC = 25°C
Pulse Test
MAXIMUM SAFE OPERATING AREA
2
–10
–7
–5
–3
–2
1
–10
–7
–5
–3
–2
0
–10
–7
–5
DRAIN CURRENT ID (A)
–3
TC = 25°C
–2
Single Pulse
–1
–10
–2 –3 –5 –7 –2
–10
1
–2
–3 –5–7 –2
–10
2
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
–8
VGS =
–10V
–6V
–3.5V
–5V
–4V
–6
tw = 10µs
100µs
1ms
10ms
DC
–3 –5–7
TC = 25°C
Pulse Test
–10
DS (V)
–3V
3
–8
–4
DRAIN CURRENT ID (A)
0
0 –4 –8 –12 –16 –20
DRAIN-SOURCE VOLTAGE VDS (V)
–3V
PD = 35W
–4
PD = 35W
–2
DRAIN CURRENT ID (A)
0
0 –2–4–6–8–10
DRAIN-SOURCE VOLTAGE VDS (V)
–2.5V
Jan.1999
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