POWEREX FX50SMJ-2 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
FX50SMJ-2
4V DRIVE
•
VDSS .............................................................–100V
•
rDS (ON) (MAX) ................................................ 50mΩ
•
ID ....................................................................–50A
•
Integrated Fast Recovery Diode (TYP.) .........100ns
•
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
2
15.9 max
φ 3.2
4
5.0
20.0
2
4
G
1
1.0
5.45
2
1
4
3
2
4
3
TO-3P
19.5 min
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
0.6 2.85.45
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 30µH
Typical value
–100
±20
–50
–200
–50
–50
–200
150
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –50V, ID = –25A, VGS = –10V, R
IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/µs
GEN
= RGS = 50Ω
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
39
47
–0.98
49.2
11130
896
480
57
118
828
380
–1.0
—
100
—
±0.1
–0.1
–2.0
50
61
–1.25
—
—
—
—
—
—
—
—
–1.5
0.83
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
250
200
150
100
50
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–100
–80
–60
VGS =
–10V
(TYPICAL)
–8V
–6V
Tc = 25°C
Pulse Test
–5V
C (°C)
–4V
MAXIMUM SAFE OPERATING AREA
–3
–2
2
–10
–7
–5
–3
–2
1
–10
–7
TC = 25°C
–5
Single Pulse
–3
–2
DRAIN CURRENT ID (A)
0
–10
–7
–5
–3
–3 –5–7 –2 –2–10
100µs
10ms
0
–2 –10
–3 –5–7–2 –10
1ms
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
–40
–30
VGS =
–10V
–8V
–6V
–5V
–4V
1
tw =
10µs
DC
–3 –5–7
DS (V)
PD = 150W
2
–40
–20
DRAIN CURRENT ID (A)
0
0 –2–4–6–8–10
PD = 150W
DRAIN-SOURCE VOLTAGE VDS (V)
–3V
–20
–10
DRAIN CURRENT ID (A)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
–3V
Tc = 25°C
Pulse Test
Jan.1999
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