POWEREX FX50SMJ-06 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX50SMJ-06
HIGH-SPEED SWITCHING USE
FX50SMJ-06
4V DRIVE
•
VDSS ...............................................................–60V
•
rDS (ON) (MAX) ............................................. 18.9mΩ
•
ID ....................................................................–50A
•
Integrated Fast Recovery Diode (TYP.) ...........70ns
•
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
2
15.9 max
φ 3.2
4
5.0
20.0
2
4
G
1
1.0
5.45
2
1
4
3
2
4
3
TO-3P
19.5 min
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
0.6 2.85.45
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 50µH
Typical value
–60
±20
–50
–200
–50
–50
–200
150
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –30V, ID = –25A, VGS = –10V, R
IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/µs
GEN
= RGS = 50Ω
MITSUBISHI Pch POWER MOSFET
FX50SMJ-06
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–60
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
15.0
23
–0.38
49.1
11610
1355
687
73
137
822
320
–1.0
—
70
—
±0.1
–0.1
–2.3
18.9
32
–0.47
—
—
—
—
—
—
—
—
–1.5
0.83
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
250
200
150
100
50
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–
100
VGS =
–10V
–
80
–
60
–
40
–20
DRAIN CURRENT ID (A)
0
–
0
1.0–2.0–3.0–4.0–5.0
(TYPICAL)
–6V
–8V
Tc = 25°C
Pulse Test
PD =
C (°C)
150W
–5V
–4V
–3V
MAXIMUM SAFE OPERATING AREA
–3
–2
2
–10
–7
–5
–3
–2
1
–10
–7
–5
TC = 25°C
–3
Single Pulse
–2
DRAIN CURRENT ID (A)
0
–10
–7
–5
–3
–2 –3 –5–7 –2
–10
0
–2
–3 –5–7 –2
–10
1
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS =
–10V
–40
–8V
–6V
–30
–5V
–20
–10
DRAIN CURRENT ID (A)
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
100µs
–3 –5–7
DS (V)
Tc = 25°C
Pulse Test
tw =
10µs
1ms
10ms
DC
–10
–4V
–3V
2
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
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