POWEREX FX50SMJ-03 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
FX50SMJ-03
4V DRIVE
•
VDSS ...............................................................–30V
•
rDS (ON) (MAX) ................................................ 35mΩ
•
ID ....................................................................–50A
•
Integrated Fast Recovery Diode (TYP.) ...........55ns
•
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
2
15.9 max
φ 3.2
4
5.0
20.0
2
4
G
1
1.0
5.45
2
1
4
3
2
4
3
TO-3P
19.5 min
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
0.6 2.85.45
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
–30
±20
–50
–200
–50
–50
–200
70
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –9A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –25A, VGS = –10V, R
IS = –25A, VGS = 0V
Channel to case
IS = –25A, dis/dt = 50A/µs
GEN
= RGS = 50Ω
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
28
54
–0.70
23
4270
695
342
21
103
223
122
–1.0
—
55
—
±0.1
–0.1
–2.3
35
72
–0.88
—
—
—
—
—
—
—
—
–1.5
1.79
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–100
–80
–60
VGS =
–10V
(TYPICAL)
–8V
–7V
C (°C)
Tc = 25°C
Pulse Test
–6V
–5V
MAXIMUM SAFE OPERATING AREA
–2
2
–10
–7
–5
–3
–2
1
–10
–7
–5
–3
–2
0
–10
DRAIN CURRENT ID (A)
TC = 25°C
–7
–5
Single Pulse
–3
–2
–2 –3 –5–7 –2
–10
0
–2
–3 –5–7 –2
–10
DC
1
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS =
–10V
–6V
–8V
–40
–30
tw = 10µs
100µs
1ms
10ms
100ms
–3 –5–7
–10
DS (V)
–5V
–4V
2
–40
–20
DRAIN CURRENT ID (A)
0
0 –2–4–6–8–10
PD = 70W
DRAIN-SOURCE VOLTAGE VDS (V)
–4V
–3V
–20
Tc = 25°C
–10
DRAIN CURRENT ID (A)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 70W
–3V
Jan.1999
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