POWEREX FX30SMJ-3 Datasheet

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX30SMJ-3

HIGH-SPEED SWITCHING USE

FX30SMJ-3

4V DRIVE

•

VDSS .............................................................–150V

•

rDS (ON) (MAX) .............................................. 100mΩ

•

ID ....................................................................–30A

•

Integrated Fast Recovery Diode (TYP.) .........100ns

•

OUTLINE DRAWING Dimensions in mm

4.5

1.5

4.4

2

15.9 max

φ 3.2

4

5.0

20.0

2

4

G

1

1.0

5.45

2

1

4

3

2

4

3

1
2
3
4

T0-3P

19.5 min

0.6 2.85.45

GATE
DRAIN
SOURCE
DRAIN

APPLICATION

Motor control, Lamp control, Solenoid control
DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

L = 30µH

Typical value

–150

±20
–30

–120

–30
–30

–120

150
–55 ~ +150
–55 ~ +150

4.8

V
V
A
A
A
A
A

W
°C
°C

g

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10V
ID = –15A, VGS = –4V
ID = –15A, VGS = –10V
ID = –15A, VDS = –10V

VDS = –10V, VGS = 0V, f = 1MHz

VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω

IS = –15A, VGS = 0V
Channel to case
IS = –30A, dis/dt = 100A/µs

MITSUBISHI Pch POWER MOSFET

FX30SMJ-3

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

–150

—
—

–1.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—

—
—
—

–1.5

78
85

–1.17

41.3

11430

674
320

61

99
878
330

–1.0

—
100

—
±0.1
–0.1
–2.0

100
111

–1.50

—

—

—

—

—

—

—

—
–1.5

0.83

—

V

µA

mA

V
mΩ
mΩ

V

S

pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

200

160

120

80

40

POWER DISSIPATION PD (W)

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

–50

VGS = –10V

–40

–30

(TYPICAL)

–6V
–5V
–4V

C (°C)

TC = 25°C
Pulse Test

–3.5V

MAXIMUM SAFE OPERATING AREA

–2

2

–10

–7
–5

–3
–2

1

–10

–7
–5

–3
–2

0

–10

DRAIN CURRENT ID (A)

–7
–5

TC = 25°C

–3

Single Pulse

–2

–2 –3 –5–7 –2

–10

1

–2

–3 –5–7 –2

–10

2

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

–20

–16

VGS = –10V

–6V
–4V

–3V

–12

tw = 10µs

100µs

1ms

10ms

DC

–3 –5–7

TC = 25°C
Pulse Test

–10

DS (V)

3

–20

PD = 150W

–10

DRAIN CURRENT ID (A)

0

0 –2–4–6–8–10

DRAIN-SOURCE VOLTAGE VDS (V)

–3V

–8

–4

DRAIN CURRENT ID (A)

0

0 –1.0 –2.0 –3.0 –4.0 –5.0

DRAIN-SOURCE VOLTAGE VDS (V)

–2.5V

Jan.1999