POWEREX FX30KMJ-2 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX30KMJ-2
HIGH-SPEED SWITCHING USE
FX30KMJ-2
4V DRIVE
•
VDSS .............................................................–100V
•
rDS (ON) (MAX) .............................................. 0.143Ω
•
ID ....................................................................–30A
•
Integrated Fast Recovery Diode (TYP.) .........100ns
•
Viso ................................................................................ 2000V
•
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
1
2
3
1
3
2
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
1
2
3
E
0.75 ± 0.15
4.5 ± 0.2
GATE
DRAIN
SOURCE
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 30µH
AC for 1minute, Terminal to case
Typical value
–100
±20
–30
–120
–30
–30
–120
30
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10V
ID = –15A, VGS = –4V
ID = –15A, VGS = –10V
ID = –15A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –50V, ID = –15A, VGS = –10V , RGEN = RGS = 50Ω
IS = –15A, VGS = 0V
Channel to case
IS = –30A, dis/dt = 100A/µs
MITSUBISHI Pch POWER MOSFET
FX30KMJ-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.113
0.135
–1.65
20
4450
330
170
16
54
270
129
–1.0
—
100
—
±0.1
–0.1
–2.0
0.143
0.176
–2.15
—
—
—
—
—
—
—
—
–1.5
4.17
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–50
–40
–30
VGS =
–10V
(TYPICAL)
–8V
–6V
–5V
C (°C)
Tc = 25°C
Pulse Test
–4V
MAXIMUM SAFE OPERATING AREA
–2
2
–10
–7
–5
–3
–2
1
–10
–7
DRAIN CURRENT ID (A)
–10
–5
–3
–2
0
–7
–5
–3
–2
–2 –10
–3 –5–7 –2 –10
100µs
TC = 25°C
Single Pulse
0
1ms
10ms
100ms
–3 –5–7 –2 –2–10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
–16
VGS =
–10V
–6V
–4V
–12
1
tw =
10µs
DC
–3 –5–7
DS (V)
Tc = 25°C
Pulse Test
2
–3V
–20
–10
DRAIN CURRENT ID (A)
0
0 –4 –8 –12 –16 –20
DRAIN-SOURCE VOLTAGE VDS (V)
–3V
PD = 30W
–8
–4
DRAIN CURRENT ID (A)
PD = 30W
0
0 –2–4–6–8–10
DRAIN-SOURCE VOLTAGE VDS (V)
–2.5V
Jan.1999
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