POWEREX FX20VSJ-3 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
FX20VSJ-3
4V DRIVE
•
VDSS ............................................................ –150V
•
rDS (ON) (MAX) ................................................0.29Ω
•
ID ................................................................... –20A
•
Integrated Fast Recovery Diode (TYP.) ........ 100ns
•
OUTLINE DRAWING Dimensions in mm
4
+0.3
3.0
–0.5
1
1
10.5 max
5
2
1
3
2
4.5
0.5
1.3
+0.3
0
–0
(1.5)
1.5 max
9.8 ± 0.5
8.6 ± 0.3
1.5 max
B
0.8
4.5
3
2.6 ± 0.4
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
4
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 30µH
Typical value
–150
±20
–20
–80
–20
–20
–80
70
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/µs
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
42
273
114
–1.0
—
100
—
±0.1
–0.1
–2.0
0.29
0.32
–2.9
—
—
—
—
—
—
—
—
–1.5
1.79
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–20
–16
–12
VGS =
–10V
(TYPICAL)
–6V
–4V
–8V
C (°C)
TC = 25°C
Pulse Test
–3V
MAXIMUM SAFE OPERATING AREA
–2
2
–10
–7
–5
–3
–2
1
–10
–7
–5
–3
–2
0
–10
DRAIN CURRENT ID (A)
–7
–5
TC = 25°C
–3
Single Pulse
–2
–2 –3 –5 –7 –2
–10
1
–2
–3 –5–7 –2
–10
2
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V
–8V
–8
–4V
–3V
–6V
–6
tw = 10µs
100µs
1ms
10ms
DC
–3 –5–7
TC = 25°C
Pulse Test
–10
DS (V)
3
–8
–4
DRAIN CURRENT ID (A)
0
0 –2–4–6–8–10
PD = 70W
DRAIN-SOURCE VOLTAGE VDS (V)
–2.5V
–4
–2
DRAIN CURRENT ID (A)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
–2.5V
Jan.1999
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