POWEREX FS70UMH-03 Datasheet

MITSUBISHI Nch POWER MOSFET
FS70UMH-03
HIGH-SPEED SWITCHING USE
FS70UMH-03
¡2.5V DRIVE ¡V
DSS .................................................................................. 30V
DS (ON) (MAX) ..............................................................14m
¡r
D ......................................................................................... 70A
¡I ¡Integrated Fast Recovery Diode (TYP.)
............. 70ns
OUTLINE DRAWING Dimensions in mm
4.5
1.3
D
0.5 2.6
4.5MAX.
16
3.8MAX.
12.5MIN.
q
10.5MAX.
3.2
2.54 2.54
qwe
wr
e
r
7.0
f 3.6
1.0
0.8
q GATE w DRAIN e SOURCE r DRAIN
TO-220
APPLICATION
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 30µH
Typical value
30
±10
70
280
70 70
280
70 –55 ~ +150 –55 ~ +150
2.0
V V A A A A A
W
°C °C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs
iss
C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±10V , VDS = 0V
V
DS = 30V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 35A, VGS = 4V
I
D = 35A, VGS = 2.5V
I
D = 35A, VGS = 4V
I
D = 35A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 15V, ID = 35A, VGS = 4V, R GEN = RGS = 50
V
S = 35A, VGS = 0V
I Channel to case
S = 35A, dis/dt = –50A/µs
I
MITSUBISHI Nch POWER MOSFET
FS70UMH-03
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
30 — —
0.6 — — — — — — — — — — — — — —
— — —
0.9 10 13
0.35 60
4000
800 420
50
250 350 350
1.0 — 70
±0.1
0.1
1.2 14 20
0.49 — — — — — — — —
1.5
1.79 —
V
µA
mA
V m m
V
S
pF pF pF ns ns ns ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
100
VGS = 5V
80
(A)
D
60
40
(TYPICAL)
4V
C
(°C)
PD = 70W
2.5V
3V
2V
MAXIMUM SAFE OPERATING AREA
3 2
2
10
7
(A)
5
D
3 2
1
10
7 5
3 2
DRAIN CURRENT I
10
TC = 25°C
0
Single Pulse
7 5
3
0
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
50
(A)
D
40
VGS = 5V
4V 3V
2.5V
30
20
DC
1
tw = 10ms
100ms
1ms 10ms
100ms
357
DS
2
(V)
2V
1.5V
23
20
DRAIN CURRENT I
TC = 25°C
0
0 0.4 0.8 1.2 1.6 2.0
Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
10
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C Pulse Test
Feb.1999
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