POWEREX FS70KM-06 Datasheet
MITSUBISHI Nch POWER MOSFET
FS70KM-06
HIGH-SPEED SWITCHING USE
FS70KM-06
¡10V DRIVE
¡V
DSS .................................................................................. 60V
DS (ON) (MAX) .............................................................7.5mΩ
¡r
D ......................................................................................... 70A
¡I
¡ntegrated Fast Recovery Diode (TYP.)
iso ................................................................................ 2000V
¡V
.............. 85ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
AC for 1minute, Terminal to case
Typical value
60
±20
70
280
70
70
280
35
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
D = 1mA, VGS = 0V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
I
GS = ±20V, VDS = 0V
V
DS = 60V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 35A, VGS = 10V
I
D = 35A, VGS = 10V
I
D = 35A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω
V
I
S = 35A, VGS = 0V
Channel to case
S = 70A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS70KM-06
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
60
—
—
2.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
5.7
0.200
70
6540
1640
790
95
195
290
210
1.0
—
85
—
±0.1
0.1
4.0
7.5
0.263
—
—
—
—
—
—
—
—
1.5
3.57
—
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
VGS = 20V
100
80
(A)
D
60
40
(TYPICAL)
10V
8V
TC = 25°C
Pulse Test
C
(°C)
6V
5V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
0
10
7
TC = 25°C
5
Single Pulse
3
100210
357357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
(A)
D
50
40
30
8V
6V
TC = 25°C
Pulse Test
20
1
357 23
PD = 35W
tw = 10ms
100ms
1ms
10ms
100ms
DC
2
DS
(V)
5V
4.5V
20
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
PD = 35W
DRAIN-SOURCE VOLTAGE VDS (V)
4V
10
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
4V
Feb.1999
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