MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
FS50KM-3
¡10V DRIVE
DSS ............................................................................... 150V
¡V
¡r
DS (ON) (MAX) ..............................................................31mΩ
D ......................................................................................... 50A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ................................................................................ 2000V
¡V
.......... 130ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
AC for 1minute, Terminal to case
Typical value
150
±20
50
200
50
50
200
35
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
D = 1mA, VGS = 0V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
I
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
V
I
S = 25A, VGS = 0V
Channel to case
S = 50A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
24
0.600
55
6540
860
360
95
155
380
180
1.0
—
130
—
±0.1
0.1
4.0
31
0.775
—
—
—
—
—
—
—
—
1.5
3.57
—
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
VGS = 20V
80
60
(A)
D
100
(TYPICAL)
8V
10V
7V
TC = 25°C
Pulse Test
C
(°C)
6V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
0
10
7
TC = 25°C
5
Single Pulse
3
0
210
10
1
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
7V
10V
6V
(A)
D
50
40
VGS = 20V
30
DC
tw = 10ms
100ms
1ms
10ms
100ms
2
357
TC = 25°C
Pulse Test
DS
3
(V)
5V
40
20
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 35W
5V
20
10
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 35W
4V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
1.6
(V)
1.2
DS (ON)
0.8
VOLTAGE V
0.4
DRAIN-SOURCE ON-STATE
TC = 25°C
Pulse Test
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
(A)
D
60
40
20
DRAIN CURRENT I
ID = 100A
80A
50A
20A
GS
(V)
TC = 25°C
DS
= 10V
V
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
TC = 25°C
Pulse Test
32
(mΩ)
24
DS (ON)
16
8
DRAIN-SOURCE ON-STATE
RESISTANCE r
0
0
10
357 2 10
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
VDS = 10V
7
Pulse Test
5
4
(S)
3
fs
2
1
10
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
VGS = 10V
1
357 23
D
(A)
TC = 25°C
75°C
125°C
20V
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
4
10
7
5
3
2
3
10
7
5
3
2
CAPACITANCE
Ciss, Coss, Crss (pF)
2
10
7
Tch = 25°C
5
f = 1MH
3
VGS = 0V
2
10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
210
1
357357 2 10
GS
(V)
Ciss
Coss
Crss
2
357 23
DS
(V)
0
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
t
5
4
d(off)
3
2
2
10
7
5
4
3
SWITCHING TIME (ns)
t
f
t
r
t
d(on)
2
1
10
0
10
23457 10
DRAIN CURRENT ID (A)
1
10
Tch = 25°C
V
V
R
1
10
DD
GS
GEN
23457
D
(A)
= 80V
= 10V
= RGS = 50Ω
23457
2
2
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
I
D
(V)
GS
= 50A
16
VDS = 50V
12
8
80V
100V
4
GATE-SOURCE VOLTAGE V
0
0 40 80 120 160 200
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
TC = 125°C
80
(A)
S
60
40
20
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
D
= 1mA
I
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
75°C
25°C
VGS = 0V
Pulse Test
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
D = 1.0
th
3
0.5
2
0
0.2
10
7
0.1
5
3
0.05
2
0.02
–1
10
7
10
5
3
2
–2
10
0.01
Single Pulse
–4
23 57 23 57 23 57 23 57
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
10023 57
w
(s)
P
tw
D
DM
T
=
tw
T
10123 57
2
10
Feb.1999
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