MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
FS4VS-12
¡VDSS ................................................................................600V
DS (ON) (MAX) ................................................................ 2.6Ω
¡r
¡I
D ............................................................................................ 4A
OUTLINE DRAWING Dimensions in mm
r
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
9.8 ± 0.5
8.6 ± 0.3
1.5MAX.
4.5
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
4.5
0.5
1.3
+0.3
0
–0
(1.5)
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
600
±30
4
12
90
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
I
D = 2A, VDS = 10V
DS = 25V, VGS = 0V, f = 1MHz
V
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 2A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
600
±30
—
—
2
—
—
1.8
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2.0
4.0
3.0
600
65
10
15
15
60
30
1.5
—
—
—
±10
2.6
5.2
—
—
—
—
—
—
—
—
2.0
1.39
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
8
(A)
D
6
(TYPICAL)
PD = 90W
C
(°C)
V
GS
200150100500
6V
= 20V
10V
8V
MAXIMUM SAFE OPERATING AREA
3
2
1
10
7
(A)
5
D
3
2
0
10
7
5
3
2
–1
10
7
5
3
23 5710
TC = 25°C
Single Pulse
1
23 5710223 5710
DRAIN CURRENT I
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
10V
8V
(A)
D
5
TC = 25°C
4
Pulse Test
3
tw=10µs
100µs
1ms
10ms
DC
3
DS
(V)
6V
2
4
2
DRAIN CURRENT I
0
0 1020304050
TC = 25°C
Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V)
5V
2
1
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
5V
Feb.1999