POWEREX FS3KMA-5A Datasheet
MITSUBISHI Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET
FS3KMA-5A
PRELIMINARY
PRELIMINARY
Notice: This is not a final specification.
Notice: This is not a final specification.
Some parametric limits are subject to change.
Some parametric limits are subject to change.
FS3KMA-5A
HIGH-SPEED SWITCHING USE
HIGH-SPEED SWITCHING USE
FS3KMA-5A OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
➀➁➂
➁
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
0.75 ± 0.15
4.5 ± 0.2
● 10V DRIVE
DSS ............................................................................... 250V
● V
DS (ON) (MAX) ................................................................ 2.0Ω
● r
D........................................................................................... 3A
● I
APPLICATION
SMPS, High speed switching use
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 200µH
AC for 1minute, Terminal to case
Typical value
➀
GATE
➁
➀
➂
DRAIN
➂
SOURCE
TO-220FN
250
±20
3
9
3
25
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
W
°C
°C
V
g
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
D = 1mA, VGS = 0V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
I
GS = ±20V, VDS = 0V
V
DS = 250V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 1.5A, VGS = 10V
I
D = 1.5A, VGS = 10V
I
D = 1.5A, VDS = 10V
I
V
DS = 25V, VGS = 0V, f = 1MHz
DD = 150V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50Ω
V
I
S = 1.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS3KMA-5A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
250
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
1.5
2.25
2.5
300
35
8
15
10
45
20
1.5
—
—
±0.1
4.0
2.0
3.0
—
—
—
—
—
—
—
—
2.0
5.0
V
µA
mA
1
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
5
VGS = 20V
4
(A)
D
10V
3
2
(TYPICAL)
8V
6V
C
(°C)
TC = 25°C
Pulse Test
PD = 25W
5V
MAXIMUM SAFE OPERATING AREA
7
5
3
2
(A)
1
D
10
7
5
3
2
0
10
7
5
3
DRAIN CURRENT I
10
TC = 25°C
2
Single Pulse
–1
7
3572
3572352
1
10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
5V
VGS = 20V
6V
10V
8V
(A)
D
1.6
1.2
0.8
2
10
TC = 25°C
Pulse Test
DS
tw =
10µs
100µs
1ms
10ms
DC
(V)
1
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4V
0.4
DRAIN CURRENT I
0
0246810
DRAIN-SOURCE VOLTAGE VDS (V)
4V
Jan. 2000
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