MITSUBISHI Nch POWER MOSFET
FS3KM-9
HIGH-SPEED SWITCHING USE
FS3KM-9
¡VDSS ................................................................................ 450V
¡r
DS (ON) (MAX) .................................................................3.5Ω
¡I
D ............................................................................................ 3A
¡V
iso ................................................................................ 2000V
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
AC for 1minute, Terminal to case
Typical value
450
±30
3
9
30
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
W
°C
°C
Vrms
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS3KM-9
HIGH-SPEED SWITCHING USE
Limits
Min. Typ.
450
±30
—
—
2
—
—
1.0
—
2.7
2.7
1.5
300
—
—
—
—
—
—
—
1.5
—
—
—
—
—
35
13
10
30
30
—
Max.
—
—
±10
3
3.5
3.5
—
—
—
6
—
—
—
—
—
2.0
4.17
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
PD = 30W TC = 25°C
8
6
4
2
DRAIN CURRENT ID (A)
0
0 1020304050
(TYPICAL)
C (°C)
Pulse Test
VGS=20V
10V
8V
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
7
5
DRAIN CURRENT ID (A)
200150100500
TC = 25°C
Single Pulse
3
2
–2
10
23 5710123 5710223 571032
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
PD = 30W TC = 25°C
4
Pulse Test
VGS=20V
10V
8V
3
6V
2
6V
1
5V
DRAIN CURRENT ID (A)
0
0 4 8 12 16 20
5V
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999