POWEREX FS3KM-10 Datasheet

MITSUBISHI Nch POWER MOSFET

FS3KM-10

HIGH-SPEED SWITCHING USE

FS3KM-10

¡VDSS ................................................................................ 500V

¡r

DS (ON) (MAX) .................................................................4.4Ω

¡I

D ............................................................................................ 3A

¡V

iso ................................................................................ 2000V

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

123

w

q

e

6.5 ± 0.3

φ 3.2 ± 0.2

1.1 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

q GATE
w DRAIN
e SOURCE

0.75 ± 0.15

4.5 ± 0.2

TO-220FN

APPLICATION

SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per­sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Viso

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

AC for 1minute, Terminal to case
Typical value

500
±30

3
9

30
–55 ~ +150
–55 ~ +150

2000

2.0

V
V
A
A

W

°C
°C

Vrms

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance

ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω

IS = 1A, VGS = 0V
Channel to case

MITSUBISHI Nch POWER MOSFET

FS3KM-10

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

500
±30

—
—

2
—
—

1.0
—
—
—
—
—
—
—
—
—

—
—
—
—

3

3.4

3.4

1.5

300

35

6
13
10
30
30

1.5
—

—
—

±10

4.4

4.4
—
—
—
—
—
—
—
—

2.0

4.17

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

(W)

40

D

30

20

10

POWER DISSIPATION P

0

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

10

PD = 30W

8

(A)

D

6

(TYPICAL)

C

(°C)

TC = 25°C
Pulse Test

VGS = 20V
10V
8V

MAXIMUM SAFE OPERATING AREA

1

10

7
5

3
2

(A)

D

0

10

7
5

3
2

–1

10

7
5

DRAIN CURRENT I

200150100500

TC = 25°C
Single Pulse

3
2

–2

10

23 5710123 5710223 571032

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms

DC

DS

(V)

OUTPUT CHARACTERISTICS

(TYPICAL)

5

(A)

D

PD = 30W

4

TC = 25°C

3

Pulse Test

V

GS

= 20V
10V
8V

6V

4

2

DRAIN CURRENT I

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

6V

5V

2

1

DRAIN CURRENT I

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

5V

Feb.1999