POWEREX FS30VSJ-3 Datasheet
MITSUBISHI Nch POWER MOSFET
FS30VSJ-3
HIGH-SPEED SWITCHING USE
FS30VSJ-3
¡4V DRIVE
¡V
DSS ................................................................................150V
DS (ON) (MAX) ..............................................................86mΩ
¡r
D ......................................................................................... 30A
¡I
¡Integrated Fast Recovery Diode (TYP.)
...........100ns
OUTLINE DRAWING Dimensions in mm
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
8.6 ± 0.3
1.5MAX.
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
r
4.5
9.8 ± 0.5
B
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
150
±20
30
120
30
30
120
70
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 15A, VGS = 10V
I
D = 15A, VGS = 4V
I
D = 15A, VGS = 10V
I
D = 15A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 15A, VGS = 0V
I
Channel to case
S = 30A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS30VSJ-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
150
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
66
69
0.99
38
3000
320
160
22
42
280
130
1.0
—
100
—
±0.1
0.1
2.0
86
90
1.29
—
—
—
—
—
—
—
—
1.5
1.78
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
50
40
(A)
D
30
(TYPICAL)
VGS = 10V
4V
5V
C
(°C)
3V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
0
10
7
5
3
101210
tw = 10ms
DC
357357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
5V
(A)
D
20
16
VGS = 10V
12
TC = 25°C
Single Pulse
100ms
1ms
10ms
100ms
2
357 23
4V
TC = 25°C
3V
Pulse Test
DS
2
(V)
2.5V
20
PD = 70W
10
DRAIN CURRENT I
TC = 25°C
0
012345
Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V)
8
4
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
Feb.1999
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