MITSUBISHI Nch POWER MOSFET
FS20SM-5
HIGH-SPEED SWITCHING USE
FS20SM-5
¡VDSS ................................................................................ 250V
¡r
DS (ON) (MAX) .............................................................. 0.19Ω
¡I
D ..........................................................................................20A
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
2
4
q GATE
w DRAIN
e SOURCE
r DRAIN
20.0
19.5MIN.
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
250
±30
20
60
150
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channle to case
MITSUBISHI Nch POWER MOSFET
FS20SM-5
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
250
±30
—
—
2
—
—
8.5
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.15
1.5
13.0
1400
280
55
25
50
150
65
1.5
—
—
—
±10
0.19
1.9
—
—
—
—
—
—
—
—
2.0
0.83
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
(W)
160
D
120
80
40
POWER DISSIPATION P
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
PD = 150W
50
40
(A)
D
30
V
GS
(TYPICAL)
= 20V
10V
C
(°C)
7V
TC = 25°C
Pulse Test
6V
MAXIMUM SAFE OPERATING AREA
2
10
7
5
3
2
(A)
D
1
10
7
5
3
2
0
10
7
5
DRAIN CURRENT I
200150100500
TC = 25°C
3
Single Pulse
2
–1
10
23 5710123 5710223 571032
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V
(A)
D
20
16
12
10V
6V
PD = 150W
5.5V
5V
20
10
DRAIN CURRENT I
4V
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
5V
8
4
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4.5V
TC = 25°C
Pulse Test
Feb.1999