POWEREX FS1VS-18A Datasheet
MITSUBISHI Nch POWER MOSFET
FS1VS-18A
HIGH-SPEED SWITCHING USE
FS1VS-18A
¡VDSS ................................................................................900V
¡r
DS (ON) (MAX) ..............................................................15.0Ω
¡I
D ............................................................................................1A
OUTLINE DRAWING Dimensions in mm
r
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
9.8 ± 0.5
8.6 ± 0.3
1.5MAX.
4.5
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
900
±30
1
3
65
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 0.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 0.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS1VS-18A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
900
±30
—
—
2
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
3
11.5
5.75
1.0
270
26
4
9
12
35
30
1.0
—
—
—
±10
15.0
7.50
—
—
—
—
—
—
—
—
1.5
1.92
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
2.0
TC = 25°C
Pulse Test
1.6
1.2
0.8
0.4
DRAIN CURRENT ID (A)
0
0 1020304050
(TYPICAL)
VGE = 20V
10V
C (°C)
PD = 65W
5V
4.5V
4V
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
7
5
DRAIN CURRENT ID (A)
3
TC = 25°C
2
Single Pulse
–2
10
0
10
210
1
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
1.0
VGE = 20V@
10V
5V
0.8
0.6
0.4
0.2
DRAIN CURRENT ID (A)
0
0 4 8 12 16 20
2
357
DS (V)
TC = 25°C
Pulse Test
4.5V
4V
tw = 100ms
1ms
10ms
100ms
DC
3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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