MITSUBISHI Nch POWER MOSFET
FS1AS-16A
HIGH-SPEED SWITCHING USE
FS1AS-16A
¡VDSS ................................................................................800V
¡r
DS (ON) (MAX) ..............................................................12.3Ω
¡I
D ............................................................................................1A
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
4
2.3
1
6.5
5.0 ± 0.2
1.0MAX.
2
wr
e
1.0
2.3
3
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE
w DRAIN
e SOURCE
r DRAIN
0.5 ± 0.1
0.5 ± 0.2
0.8
MP-3
APPLICATION
SMPS, DC-DC Conver ter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
800
±30
1
3
55
–55 ~ +150
–55 ~ +150
0.26
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 800V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 0.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 0.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS1AS-16A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
800
±30
—
—
2
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
3
9.43
4.72
1.0
270
26
4
9
12
35
30
1.0
—
—
—
±10
12.3
6.15
—
—
—
—
—
—
—
—
1.5
2.27
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
2.0
TC = 25°C
Pulse Test
VGS = 20V
1.6
(A)
D
1.2
(TYPICAL)
10V
C
(°C)
PD = 55W
5V
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
(A)
D
0
10
7
5
3
2
–1
10
7
TC = 25°C
5
DRAIN CURRENT I
10
Single Pulse
3
2
–2
1
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
(A)
D
1.0
0.8
TC = 25°C
Pulse Test
0.6
DC
2
357 32
10V
5V
100ms
1ms
10ms
100ms
3
DS
(V)
4.5V
0.8
0.4
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
4.5V
4V
0.4
0.2
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4V
Feb.1999