POWEREX FS10KMJ-3 Datasheet
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
FS10KMJ-3
¡4V DRIVE
DSS ................................................................................150V
¡V
¡r
DS (ON) (MAX) ........................................................... 160mΩ
D ......................................................................................... 10A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ................................................................................ 2000V
¡V
............. 90ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
AC for 1minute, Terminal to case
Typical value
150
±20
10
40
10
10
40
25
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 4V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 5A, VGS = 0V
I
Channel to case
S = 10A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
150
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
120
125
0.60
18
1800
180
85
17
23
150
75
1.0
—
90
—
±0.1
0.1
2.0
160
165
0.80
—
—
—
—
—
—
—
—
1.5
5.00
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
TC = 25°C
Pulse Test
8
(A)
D
6
(TYPICAL)
VGS = 10V 4V5V
C
(°C)
3V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
0
10
7
TC = 25°C
5
Single Pulse
3
210
357 2 10
DC
1
357 2210
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V 4V5V 3V
(A)
D
5
TC = 25°C
Pulse Test
4
3
tw = 10ms
100ms
1ms
10ms
2
357
DS
3
(V)
2.5V
4
2
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
2
1
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
Feb.1999
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