POWEREX FS10KMA-4A Datasheet
MITSUBISHI Nch POWER MOSFET
FS10KMA-4A
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH-SPEED SWITCHING USE
FS10KMA-4A
● 10V DRIVE
DSS ............................................................................... 200V
● V
● r
DS (ON) (MAX) ............................................................. 0.52Ω
D.........................................................................................10A
● I
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
➀➁➂
➁
➀
➂
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
GATE
➀
➁
DRAIN
➂
SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
CS Switch for CRT Display monitor, Switch mode
power supply, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 200µH
AC for 1minute, Terminal to case
Typical value
200
±20
10
30
10
32
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
W
°C
°C
V
g
Sep.1998
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
I
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
D = 1mA, VGS = 0V
IGS = ±10µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 200V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V , VGS = 0V, f = 1MHz
VDD = 100V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS10KMA-4A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
200
±20
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.40
2.00
7.0
650
80
25
15
20
80
25
0.95
—
—
±10
4.0
0.52
2.60
—
—
—
—
—
—
—
—
—
3.91
V
V
µA
mA
1
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
VGS = 20V
10V
6V
8
5V
6
4
(TYPICAL)
C (°C)
TC = 25°C
Pulse Test
4.5V
PD = 32W
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
TC = 25°C
–1
10
Single Pulse
7
5
1
10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
4.0
3.0
VGS = 20V
10V
6V
5V
2.0
2
tw = 10µs
100µs
1ms
10ms
DC
357
TC = 25°C
Pulse Test
3
DS (V)
4V
2
3357 2 10
2
DRAIN CURRENT ID (A)
0
0246810
DRAIN-SOURCE VOLTAGE VDS (V)
4V
1.0
DRAIN CURRENT ID (A)
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
3.5V
Sep.1998
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