POWEREX FS100SMJ-03 Datasheet
MITSUBISHI Nch POWER MOSFET
FS100SMJ-03
HIGH-SPEED SWITCHING USE
FS100SMJ-03
¡4V DRIVE
¡V
DSS ................................................................................. 30V
DS (ON) (MAX) ............................................................4.7mΩ
¡r
D ...................................................................................... 100A
¡I
¡Integrated Fast Recovery Diode (TYP.)
.......... 100ns
OUTLINE DRAWING Dimensions in mm
4.5
1.5
20.0
4.4
2
15.9MAX.
r
5.0
f 3.2
2
4
G
1.0
qwe
5.45
4
wr
q
e
5.45
TO-3P
19.5MIN.
0.6 2.8
q GATE
w DRAIN
e SOURCE
r DRAIN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 30µH
Typical value
30
±20
100
400
100
100
400
150
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 30V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 50A, VGS = 10V
I
D = 50A, VGS = 4V
I
D = 50A, VGS = 10V
I
D = 50A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 50A, VGS = 0V
I
Channel to case
S = 50A, dis/dt = –50A/µs
I
MITSUBISHI Nch POWER MOSFET
FS100SMJ-03
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
3.5
4.7
0.175
80
8000
2250
1300
55
190
800
470
1.0
—
100
—
±0.1
0.1
2.0
4.7
8.0
0.235
—
—
—
—
—
—
—
—
1.5
0.83
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
250
(W)
200
D
150
100
50
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
100
VGS = 10V
80
(A)
D
60
6V
(TYPICAL)
5V
4V
C
(°C)
TC = 25°C
Pulse Test
3V
MAXIMUM SAFE OPERATING AREA
5
3
2
2
10
(A)
D
7
5
3
2
1
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
Single Pulse
0
10
7
5
0
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
(A)
D
50
40
VGS = 10V
6V
5V
4V
30
1
tw = 10ms
100ms
1ms
10ms
DC
357
3V
DS
2
23
(V)
40
20
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
20
10
DRAIN CURRENT I
0
0 0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
2V
TC = 25°C
Pulse Test
Feb.1999
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