POWEREX FS100KMJ-03 Datasheet
MITSUBISHI Nch POWER MOSFET
FS100KMJ-03
HIGH-SPEED SWITCHING USE
FS100KMJ-03
¡4V DRIVE
DSS ................................................................................. 30V
¡V
¡r
DS (ON) (MAX) ............................................................4.7mΩ
D ...................................................................................... 100A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ............................................................................... 2000V
¡V
.......... 100ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 30µH
AC for 1minute, Terminal to case
Typical value
30
±20
100
400
100
100
400
35
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 30V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 50A, VGS = 10V
I
D = 50A, VGS = 4V
I
D = 50A, VGS = 10V
I
D = 50A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 50A, VGS = 0V
I
Channel to case
S = 50A, dis/dt = –50A/µs
I
MITSUBISHI Nch POWER MOSFET
FS100KMJ-03
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
3.5
4.7
0.175
80
8000
2250
1300
55
190
800
470
1.0
—
100
—
±0.1
0.1
2.0
4.7
8.0
0.235
—
—
—
—
—
—
—
—
1.5
3.57
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
100
VGS = 10V
80
(A)
D
60
6V
(TYPICAL)
5V
4V
C
(°C)
TC = 25°C
Pulse Test
3V
MAXIMUM SAFE OPERATING AREA
5
3
2
2
10
(A)
D
7
5
3
2
1
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
Single Pulse
0
10
7
5
0
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
(A)
D
50
40
VGS = 10V
6V
5V
4V
30
1
tw = 10ms
100ms
1ms
10ms
100ms
DC
357
3V
DS
2
23
(V)
40
20
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 35W
2V
20
10
DRAIN CURRENT I
0
0 0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
2V
TC = 25°C
Pulse Test
Feb.1999
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