POWEREX FL10KM-12A Datasheet
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH-SPEED SWITCHING USE
FL10KM-12A
● 10V DRIVE
DSS ............................................................................... 600V
● V
● r
DS (ON) (MAX) ................................................................1.1Ω
D.........................................................................................10A
● I
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
➀➁➂
➁
➀
➂
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
GATE
➀
➁
DRAIN
➂
SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Switch mode power supply, Inverter fluorescent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 200µH
AC for 1minute, Terminal to case
Typical value
600
±30
10
30
10
40
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
W
°C
°C
V
g
Sep.1998
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
I
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
D = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V , VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
600
±30
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.92
4.60
7.0
1150
135
45
24
40
220
85
1.5
—
—
±10
4.0
1.10
5.50
—
—
—
—
—
—
—
—
2.0
3.13
V
V
µA
mA
1
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
PD = 40W
16
12
(TYPICAL)
VGS = 10V
6V
C (°C)
TC = 25°C
Pulse Test
5V
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
TC = 25°C
–1
10
Single Pulse
7
5
1
10
57 2 10
3
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
PD = 40W
8
6
2
tw = 10µs
100µs
1ms
10ms
DC
357
TC = 25°C
Pulse Test
VGS = 10V
6V
5V
3
DS (V)
4.5V
23
8
4.5V
4
DRAIN CURRENT ID (A)
0
0 1020304050
4V
DRAIN-SOURCE VOLTAGE VDS (V)
4
2
DRAIN CURRENT ID (A)
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4V
Sep.1998
Loading...