POWEREX FK14VS-9 Datasheet
MITSUBISHI Nch POWER MOSFET
FK14VS-9
HIGH-SPEED SWITCHING USE
FK14VS-9
¡VDSS ................................................................................450V
¡r
DS (ON) (MAX) ..............................................................0.65Ω
¡I
D ......................................................................................... 14A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
OUTLINE DRAWING Dimensions in mm
r
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
9.8 ± 0.5
8.6 ± 0.3
1.5MAX.
4.5
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
4.5
0.5
1.3
+0.3
0
–0
(1.5)
TO-220S
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
—
Weight
VGS = 0V
VDS = 0V
Typical value
450
±30
14
42
14
42
150
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 10V
ID = 7A, VGS = 10V
I
D = 7A, VDS = 10V
DS = 25V, VGS = 0V, f = 1MHz
V
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 7A, VGS = 0V
Channel to case
IS = 14A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK14VS-9
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
450
±30
—
—
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
±10
—
2
3
0.50
3.50
7.0
1500
180
30
30
50
130
50
1.5
—
—
0.65
4.55
—
—
—
—
—
—
—
—
2.0
0.83
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
(W)
160
D
120
80
40
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
200150100500
10
–1
Single Pulse
7
5
0
10
23 5710
1
23 5710223 5710
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
3
Feb.1999
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