POWEREX FK10VS-10 Datasheet
MITSUBISHI Nch POWER MOSFET
FK10VS-10
HIGH-SPEED SWITCHING USE
FK10VS-10
DSS ............................................................................... 500V
¡V
¡r
DS (ON) (MAX) ............................................................. 1.13Ω
¡I
D .........................................................................................10A
¡Integrated Fast Recovery Diode (MAX.) ....... 150ns
OUTLINE DRAWING Dimensions in mm
r
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
9.8 ± 0.5
8.6 ± 0.3
1.5MAX.
4.5
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
—
Weight
VGS = 0V
VDS = 0V
Typical value
500
±30
10
30
10
30
125
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK10VS-10
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
500
±30
—
—
2
—
—
3.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.88
4.40
5.5
1100
130
20
20
30
95
35
1.5
—
—
—
—
±10
1.13
5.65
—
—
—
—
—
—
—
—
2.0
1.0
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
(W)
160
D
120
80
40
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
10
200150100500
–1
7
5
10
Single Pulse
0
23 5710
1
23 5710223 5710
DRAIN-SOURCE VOLTAGE V
DS
(V)
tw=10µs
100µs
1ms
10ms
DC
3
Feb.1999
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