POWEREX FK10KM-9 Datasheet
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
FK10KM-9
¡V
DSS ................................................................................450V
¡r
DS (ON) (MAX) ..............................................................0.92Ω
¡I
D ......................................................................................... 10A
¡V
iso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
—
VGS = 0V
VDS = 0V
AC for 1minute, Terminal to case
Typical value
450
±30
10
30
10
30
35
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
W
°C
°C
Vrms
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
V
DS = 450V, VGS = 0V
D = 1mA, VDS = 10V
I
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
I
D = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
DD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
450
±30
—
—
2
—
—
3.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.70
3.50
5.5
1100
130
20
20
30
95
35
1.5
—
—
—
—
±10
0.92
4.60
—
—
—
—
—
—
—
—
2.0
3.57
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
2
10
–1
7
5
0
10
TC = 25°C
Single Pulse
23 5710
1
23 5710223 5710
DRAIN CURRENT I
200150100500
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
3
Feb.1999
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