POWEREX CT30VS-8 Datasheet
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
CT30VS-8
¡VCES ............................................................................... 400V
¡I
CM ................................................................................... 180A
OUTLINE DRAWING Dimensions in mm
+0.3
–0.5
3.0
10.5MAX.
1
qwe
5
wr
e
1.5MAX.
0.8
2.6 ± 0.4
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
1.5MAX.
8.6 ± 0.3
r
q
9.8 ± 0.5
4.5
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VCES
VGES
VGEM
ICM
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±40V , VCE = 0V
VCE = 10V, IC = 1mA
400
±30
±40
180
–40 ~ +150
–40 ~ +150
Limits
Min. Typ. Max.
450
—
—
—
—
—
—
—
—
10
±0.1
7.0
V
V
V
A
°C
°C
V
µA
µA
V
Feb.1999
PERFORMANCE CURVES
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
MAXIMUM PULSE COLLECTOR CURRENT
200
160
TC = 50°C
120
80
40
0
PULSE COLLECTOR CURRENT ICM (A)
GATE-EMITTER VOLTAGE V
APPLICATION EXAMPLE
IXe
MAXIMUM PULSE COLLECTOR CURRENT
CM = 1000µF
<
<
TC = 70°C
50403010020
GE (V)
2000
1600
1200
800
VCM = 350V
400
MAIN CAPACITOR CM (µF)
<
TC = 70°C
>
VGE = 28V
0
PULSE COLLECTOR CURRENT I
Figure 1 Figure 2
TRIGGER
SIGNAL
Vtrig
220200180140120 160
CP (A)
C
M
Vtrig
+
VCM
–
RG
VG
RECOMMEND CONDITION
CM = 330V
V
P = 160A
I
M = 800µF
C
GE = 28V
V
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
Notice 3. The operation life should be endured 5,000 shots under the charge current
Notice 4. Total operation hours must be applied within 5,000 hours.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
So please handle carefully not to suffer from electrostatic charge.
(Ixe ≤ 180A : full luminescence condition) of main condenser (CM=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
IGBT
CE
V
MAXIMUM CONDITION
360V
180A
1000µF
IGBT GATE
VOLTAGE
Xe TUBE
CURRENT
V
Ixe
G
Feb.1999
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