Powerex CM900DUC-24S Data Sheet

CM900DUC-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

(8 PLACES)

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.91 150.0

B 5.10 129.5

C 1.67±0.01 42.5±0.25

D 5.41±0.01 137.5±0.25

E 6.54 166.0

F 2.91±0.01 74.0±0.25

G 1.65 42.0

H 0.55 14.0

J 1.50±0.01 38.0±0.25

K 0.16 4.0

L 1.36 +0.04/-0.02 34.6 +1.0/-0.5

Housing Type (J.S.T. MFG. CO. LTD)

BB = VHR-2N
CC = VHR-5N

P

BB

CC

C2 (Cs2)

G2

E2 (Es2)

U

C2

G2 E1

E2 G1

V

H H HHH H

C2E1

Tr 2

Di2

E2

D

G

H H

C2E1

E2

G G

LABEL

Tr 1

Di1

C1

N

S

W

C1

C1

C1 (Cs1)

E1 (Es1)

G1

Dimensions Inches Millimeters

M 0.075±0.008 1.9±0.2

N 0.47 12.0

P 0.26 6.5

R M6 Metric M6

S 0.08 2.0

T 0.99 25.1

U 0.62 15.7

V 0.71 18.0

W 0.75 19.0

X 0.43 11.0

Y 0.83 21.0

Z 0.41 10.5

AA 0.22 5.5

J

X

Y

U

R (9 PLACES)

F

B

C

J

AA

T

E

F

M

Z

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

L

L

Mega Power Dual IGBT

900 Amperes/1200 Volts

K

Description:

Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

£ Low Drive Power
£ Low V
£

£ Isolated Baseplate for Easy

£ RoHS Compliant

Applications:

£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM900DUC-24S
is a 1200V (V
Dual IGBTMOD Power
Module.

Current Rating V
Type Amperes Volts (x 50)

CM 900 24

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Heatsinking

), 900 Ampere

CES

CES

109/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM900DUC-24S
Mega Power Dual IGBT

900 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 900 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature T

Maximum Case Temperature T

Operating Junction Temperature T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

0

116.0

96.4

74.5

54.9

1200 Volts

CES

±20 Volts

GES

1800 Amperes

CRM

6520 Watts

tot

*1

900 Amperes

E

*1

1800 Amperes

ERM

4000 Volts

isol

175 °C

j(max)

125 °C

C (max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

38.2

51.0

Di2

Tr2

Di2

Tr2

Di2

Tr2

Di2

Tr2

98.9

111.8

Di1

Tr1

Di1

Tr1

Di1

Tr1

Di1

Tr1

0

Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.

LABEL SIDE

2 09/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM900DUC-24S
Mega Power Dual IGBT

900 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 900A, VGE = 15V, Tj = 125°C*6 — 1.75 — Volts

IC = 900A, VGE = 15V, Tj = 150°C*6 — 1.80 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 900A, VGE = 15V, Tj = 125°C*6 — 1.75 — Volts

IC = 900A, VGE = 15V, Tj = 150°C*6 — 1.80 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 900A, VGE = 15V — 2300 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 900A, VGE = ±15V, — — 250 ns

Turn-off Delay Time t

Fall Time tf — — 350 ns

Emitter-Collector Voltage V

(Terminal) IE = 900A, VGE = 0V, Tj = 125°C*6 — 1.65 — Volts

IE = 900A, VGE = 0V, Tj = 150°C*6 — 1.65 — Volts

Emitter-Collector Voltage V

(Chip) IE = 900A, VGE = 0V, Tj = 125°C*6 — 1.65 — Volts

IE = 900A, VGE = 0V, Tj = 150°C*6 — 1.65 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 900A, — 65.3 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 2.2 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 90mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 900A, VGE = 15V, Tj = 25°C*6 — 1.55 1.90 Volts

CE(sat)

IC = 900A, VGE = 15V, Tj = 25°C*6 — 1.55 1.90 Volts

CE(sat)

— — 90 nF

ies

VCE = 10V, VGE = 0V — — 18 nF

oes

— — 1.5 nF

res

— — 900 ns

d(on)

RG = 0Ω, Inductive Load — — 950 ns

d(off)

*1

IE = 900A, VGE = 0V, Tj = 25°C*6 — 1.65 2.10 Volts

EC

*1

IE = 900A, VGE = 0V, Tj = 25°C*6 — 1.65 2.10 Volts

EC

*1

VCC = 600V, IE = 900A, VGE = ±15V — — 450 ns

rr

*1

RG = 0Ω, Inductive Load — 50 — µC

rr

VGE = ±15V, RG = 0Ω, Tj = 150°C, — 183 — mJ

off

*1

Inductive Load — 73.3 — mJ

rr

CC' + EE'

Main Terminals-Chip, — 0.286 — mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 3.0 µA

GES

*4

0

38.2

116.0

96.4

74.5

54.9

51.0

Di2

Tr2

Di2

Tr2

Di2

Tr2

Di2

Tr2

98.9

111.8

Di1

Tr1

Di1

Tr1

Di1

Tr1

Di1

Tr1

0

Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.

LABEL SIDE

309/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM900DUC-24S
Mega Power Dual IGBT

900 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Contact Thermal Resistance, R

Case to Heatsink (Per 1 Module)

Q Per Inverter IGBT — — 23 K/kW

th(j-c)

D Per Inverter Diode — — 39 K/kW

th(j-c)

Thermal Grease Applied — 6 — K/kW

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 22 27 31 in-lb

Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 24 — — mm

Terminal to Baseplate 33 — — mm

Clearance da Terminal to Terminal 14 — — mm

Terminal to Baseplate 33 — — mm

Weight m — 1450 — Grams

Flatness of Baseplate ec On Centerline X, Y*5 -50 — +10 0 µm

Recommended Operating Conditons, Ta = 25°C

(DC) Supply Voltage VCC Applied Across P-N — 600 850 Volts

Gate-Emitter Drive Voltage V

External Gate Resistance RG Per Switch 0 — 3.6 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

39 mm 39 mm

Y1

– CONCAVE

+ CONVEX

BOTTOM

LABEL SIDE

BOTTOM

*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

Y2

X

BOTTOM

– CONCAVE

+ CONVEX

Applied Across G-Es 13.5 15.0 16.5 Volts

GE(on)

0

38.2

51.0

116.0

96.4

74.5

54.9

0

Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.

Di2

Tr2

Di2

Tr2

Di2

Tr2

Di2

Tr2

98.9

Di1

Di1

Di1

Di1

111.8

Tr1

Tr1

Tr1

Tr1

LABEL SIDE

4 09/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM900DUC-24S
Mega Power Dual IGBT

900 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(CHIP - TYPICAL)

2000

1800

1600

1400

1200

, (AMPERES)

C

1000

15

VGE = 20V

13.5

800

600

400

200

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

3

10

, (AMPERES)

E

2

10

1

10

EMITTER CURRENT, I

0

10

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

4

10

VCC = 600V
V
R
T
Inductive Load

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

(CHIP - TYPICAL)

VGE = 15V

HALF-BRIDGE

SWITCHING CHARACTERISTICS

GE

= 0Ω

G

= 150°C

j

COLLECTOR CURRENT, I

= ±15V

(TYPICAL)

t

f

t

d(on)

t

r

10

t

d(off)

2

C

Tj = 25°C

12

11

10

9

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

, (VOLTS)

EC

, (AMPERES)

3

10

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

COLLECTOR-EMITTER

(CHIP - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

3

10

, (nF)

2

10

res

, C

oes

, C

ies

1

10

0

10

CAPACITANCE, C

VGE = 0V
T

= 25°C

j

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

3

10

VCC = 600V
V

= ±15V

GE

SWITCHING TIME, (ns)

2

10

-1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

(TYPICAL)

0

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

0

10

CE

C

ies

C

oes

C

res

1

10

t

d(on)

t

d(off)

t

f

t

r

IC = 900A
T

= 125°C

j

Inductive Load

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

COLLECTOR-EMITTER

(CHIP - TYPICAL)

Tj = 25°C

IC = 1800A

IC = 900A

4

COLLECTOR-EMITTER

IC = 360A

2

SATURATION VOLTAGE, V

0

20001500500 1000

2

10

1

10

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

4

10

VCC = 600V
V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

3

10

VCC = 600V
V

GE

SWITCHING TIME, (ns)

2

10

-1

10

EXTERNAL GATE RESISTANCE, R

(TYPICAL)

= ±15V

t

f

t

d(on)

t

r

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

= ±15V

10

t

d(off)

2

t

d(off)

t

d(on)

0

t

f

t

r

IC = 900A
T

= 150°C

j

Inductive Load

, (Ω)

G

3

10

1

10

509/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM900DUC-24S
Mega Power Dual IGBT

900 Amperes/1200 Volts

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 600V
V

GE

R

= 0Ω

G

(ns)

rr

T

= 125°C

j

Inductive Load

(A), t

rr

REVERSE RECOVERY, I

2

10

1

10

CHARACTERISTICS (TYPICAL)

3

10

V

CC

V

GE

R

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

= 0Ω

G

T

= 125°C

j

2

10

1

10

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

3

10

VCC = 600V
V

GE

I

C/IE

T

= 150°C

j

2

10

1

10

-1

10

(TYPICAL)

= ±15V

I

rr

t

rr

2

EMITTER CURRENT, IE, (AMPERES)

10

HALF-BRIDGE SWITCHING

= 600V
= ±15V

2

10

EMITTER CURRENT, IE, (AMPERES)

= ±15V
= 900A

0

10

GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 600V
V

GE

R

= 0Ω

(ns)

rr

(A), t

rr

G

T

= 150°C

j

Inductive Load

= ±15V

I

rr

t

rr

(TYPICAL)

20

15

, (VOLTS)

GE

10

GATE CHARGE VS. V

IC = 900A
V

= 600V

CC

T

= 25°C

j

GE

5

REVERSE RECOVERY, I

2

3

10

E

on

E

off

E

rr

3

10

E

on

E

off

E

rr

1

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

3

10

VCC = 600V
V

= ±15V

GE

R

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

th(j-c')

• (NORMALIZED VALUE)

= R
Z

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

= 0Ω

G

T

= 150°C

j

2

10

1

10

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10-310

0

10

-1

10

-2

10

th

th

-3

10

-2

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

23 K/kW
(IGBT)
R

=

th(j-c)

39 K/kW
(FWDi)

2

10

2

10

(MAXIMUM)

-1

10

-5

10

TIME, (s)

10

10

10

E

on

E

off

E

rr

10

0

10

-4

10

GATE-EMITTER VOLTAGE, V

3

3

1

10

10

10

-3

0

3

10

, (mJ)

rr

, (mJ)

off

, E

on

2

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

1

10

10

-1

-2

-3

500 2500

0

1000 1500 30002000

GATE CHARGE, QG, (nC)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

V

= 600V

CC

V

= ±15V

GE

I

= 900A

C/IE

T

= 125°C

j

-1

GATE RESISTANCE, RG, (Ω)

0

10

E

on

E

off

E

rr

1

10

6 09/12 Rev. 0