POWEREX CM900DU-24NF Datasheet
CM900DU-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)
C
J
BUC
J
R (9 PLACES)
F
E
F
M
L
K
L
(8 PLACES)
S
P
U
C
GE
EG
T
V
HH HHHH
A
D
G
HH
C2E1
E2
G G
LABEL
C1
Mega Power Dual™
IGBTMOD
900 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
C2
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A5.91 150.0
B5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E6.54 166.0
F 2.91±0.01 74.0±0.25
G1.65 42.0
H0.55 14.0
Housing Type (J.S.T. MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
G2
E2
E2
Dimensions Inches Millimeters
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
M 0.075±0.08 1.9±0.2
P 0.26 6.5
R M6 Metric M6
U 0.62 15.7
V 0.71 18.0
C1
E1
G1
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ High Power UPS
□ Large Motor Drives
□ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM900DU-24NF is
a 1200V (V
), 900 Ampere
CES
Dual IGBTMOD Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 900 24
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM900DU-24NF
Mega Power Dual™ IGBTMOD
900 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM900DU-24NF Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current (TC = 25°C)** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C) P
j
stg
CES
GES
C
CM
E
EM
C
Mounting Torque, M6 Mounting Screws – 40 in-lb
Mounting Torque, M6 Main Ter minal Screw – 40 in-lb
Weight (Typical) – 1400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
900 Amperes
1800* Amperes
900 Amperes
1800* Amperes
5950 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 90mA, VCE = 10V 6 7 8 Volts
IC = 900A, VGE = 15V, Tj = 25°C– 1.9 2.5 Volts
(Without Lead Resistance) (Chip) IC = 900A, VGE = 15V, Tj = 125°C– 2.1 – Volts
Module Lead Resistance R
Total Gate Charge Q
Emitter-Collector Voltage** V
(lead)
G
EC
IC = 900A, Ter minal-chip – 0.143 – mΩ
VCC = 600V, IC = 900A, VGE = 15V – 4800 – nC
IE = 900A, VGE = 0V – – 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 16 nF
VCC = 600V, – – 300 ns
IC = 900A, IE = 900A, – – 200 ns
V
= V
GE1
= 15V, – – 800 ns
GE2
RG = 1.0⍀,––300 ns
Inductive Load – – 500 ns
Switching Operation – 50 – µC
––140 nF
––3nF
rating.
j(max)
2
2
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