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CM800DY-24S
Data Sheet
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Powerex CM800DY-24S Data Sheet

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Page 1
CM800DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
B
F E
H J
E
B
F
R
Q
T (4 PLACES)
Y
W
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
C 1.38+0.04/-0.02 35.0+1.0/-0.5
F 4.33±0.001 110.0±0.25
C2E1
X
Tr2
Di2
E2
X X
U NUTS (3 PLACES)
E2
G
D
K
C1
Di1
Tr1
Dimensions Inches Millimeters
T 0.26 Dia. 6.5 Dia.
U M8 Metric M8
V M4 Metric M4
AA 0.96+0.04/-0.02 24.5+1.0/-0.5
M
G2E2E1G1
L
N
P
N
V NUTS (4 PLACES)
AB AC
Z G2 E2
C1
E1 G1
LABEL
AA
S
Dual IGBT S-Series Module
800 Amperes/1200 Volts
Description:
Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
£ Low Drive Power £ Low V £
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM800DY-24S is a 1200V (V IGBT Power Module.
Current Rating V Type Amperes Volts (x 50)
CM 800 24
CE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
Heat Sinking
), 800 Ampere Dual
CES
CES
102/14 Rev. 1
Page 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (G-E Short-Circuited) V
Gate-Emitter Voltage (C-E Short-Circuited) V
Collector Current (DC, TC = 117°C)
*2,*4
IC 790 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current*2 I
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature, Instantaneous Event (Overload) T
Case Temperature*4 T
Operating Junction Temperature, Continuous Operation (Under Switching) T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (T *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
100.9
87.1
42.9
29.1
1200 Volts
CES
±20 Volts
GES
1600 Amperes
CRM
5355 Watts
tot
*1
790 Amperes
E
*1
1600 Amperes
ERM
2500 Volts
ISO
175 °C
j(max)
125 °C
C(max)
-40 ~ +150 °C
j(opr)
-40 ~ +125 °C
stg
Tr2
Di2
Tr2
Di2
Tr1
Di1
Tr1
Di1
Tr2
Di2
Tr2
Di2
Di1
Tr1
Di1
Tr1
0
0 28.8
97.2
42
84
2
02/14 Rev. 1
Page 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 800A, VGE = 15V, Tj = 125°C*5 — 2.25 — Volts
IC = 800A, VGE = 15V, Tj = 150°C*5 — 2.35 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 800A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 800A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 800A, VGE = 15V — 1868 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 800A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 800A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts
IE = 800A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts
Emitter-Collector Voltage V
(Chip) IE = 800A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 800A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 800A, — 107 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 2.45 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 80mA, VCE = 10V 5.4 6.0 6.6 Volts
GE(th)
IC = 800A, VGE = 15V, Tj = 25°C*5 — 1.95 2.40 Volts
CE(sat)
IC = 800A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 80 nF
ies
VCE = 10V, G-E Short-Circuited — — 16 nF
oes
— — 1.32 nF
res
— — 800 ns
d(on)
RG = 0Ω, Inductive Load — — 600 ns
d(off)
*1
IE = 800A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts
EC
*1
IE = 800A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 800A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load — 42.8 — µC
rr
VGE = ±15V, RG = 0Ω, — 82 — mJ
off
*1
Tj = 150°C, Inductive Load — 71 — mJ
rr
CC' + EE'
Main Terminals-Chip, — — 0.4 mΩ
, G-E Short-Circuited — — 1.0 mA
CES
, C-E Short-Circuited — — 0.5 µA
GES
*2
02/14 Rev. 1
3
Page 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*4 R
Thermal Resistance, Junction to Case*4 R
Contact Thermal Resistance, R
Case to Heatsink*4 (Per 1/2 Module)
Mechanical Characteristics
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Mounting Torque Mt Main Terminals, M8 Screw 78 85 95 in-lb
Mt Auxiliary G/Es Terminals, M4 Screw 11 13 15 in-lb
Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb
Weight m — 1200 — Grams
Flatness of Baseplate ec On Centerline X, Y*7 -100 — +100 µm
Recommended Operating Conditions, Ta = 25°C
Characteristics Symbol Test Conditions Min. Typ. Max. Units
(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 — 5.1 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Q Per IGBT — — 28 K/kW
th(j-c)
D Per IFWDi — — 45 K/kW
th(j-c)
Thermal Grease Applied — 15 — K/kW
th(c-s)
*6
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts
GE(on)
Tr2
100.9
87.1
Di2
Tr2
Di2
Tr2
Di2
Tr2
Di2
– CONCAVE
+ CONVEX
BOTTOM
LABEL SIDE
BOTTOM
4
Y
X
BOTTOM
– CONCAVE
+ CONVEX
42.9
29.1
0
Tr1
Tr1
0 28.8
Di1
Di1
42
Di1
Tr1
Di1
Tr1
97.2
84
02/14 Rev. 1
Page 5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
1600
15
13.5
VGE = 20V
1200
, (AMPERES)
C
800
400
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
8
, (VOLTS)
CE(sat)
6
IC = 1600A
Tj = 25°C
12
11
10
9
Tj = 25°C
(Chip)
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
(TYPICAL)
3.5
VGE = 15V
T
3.0
, (VOLTS)
2.5
CE(sat)
= 25°C
j
= 125°C
T
j
= 150°C
T
j
2.0
1.5
1.0
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE, V
0
0 400 800 1200 1600
COLLECTOR-CURRENT, IC, (AMPERES)
FREE-WHEEL DIODE
4
10
3
10
, (AMPERES)
E
FORWARD CHARACTERISTICS
VGE = 15V
T
j
T
j
T
j
(TYPICAL)
= 25°C = 125°C = 150°C
(Chip)
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
02/14 Rev. 1
IC = 800A
IC = 320A
(Chip)
2
10
EMITTER CURRENT, I
1
10
0 0.5 1.0 1.5 2.0 3.02.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
(Chip)
5
Page 6
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
3
10
2
, (nF)
10
res
, C
oes
, C
ies
1
10
0
10
CAPACITANCE, C
VGE = 0V f = 1MHz
-1
10
-1
10
COLLECTOR-EMITTER VOLTAGE, V
COLLECTOR CURRENT (TYPICAL)
3
10
, (ns)
f
, t
d(off)
, t
r
, t
d(on)
2
10
CAPACITANCE VS. V
(TYPICAL)
0
10
10
SWITCHING TIME VS.
t
d(on)
C
C
C
1
CE
ies
oes
res
CE
t
d(off)
, (VOLTS)
t
f
10
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
3
10
t
d(off)
t
t
r
d(on)
t
f
, (ns)
f
, t
d(off)
, t
r
, t
d(on)
2
10
VCC = 600V V
= ±15V
GE
R
= 0Ω
SWITCHING TIME, t
G
T
= 125°C
j
Inductive Load
1
10
2
1
10
COLLECTOR CURRENT, I
10
2
C
, (AMPERES)
10
3
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
3
10
t
d(on)
, (ns)
f
, t
d(off)
, t
r
, t
d(on)
10
t
d(off)
2
t
r
t
f
SWITCHING TIME, t
1
10
10
6
VCC = 600V V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
Inductive Load
1
COLLECTOR CURRENT, I
10
t
r
2
C
, (AMPERES)
10
VCC = 600V V
= ±15V
GE
I
= 800A
SWITCHING TIME, t
C
T
= 125°C
j
Inductive Load
1
3
10
-1
10
EXTERNAL GATE RESISTANCE, R
10
0
10
1
, (Ω)
G
10
2
02/14 Rev. 1
Page 7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
off
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
4
10
, (ns)
f
, t
d(off)
3
10
, t
r
, t
d(on)
2
10
SWITCHING TIME, t
1
10
0
10
COLLECTOR CURRENT (TYPICAL)
3
10
VCC = 600V V
GE
R
= 0Ω
,
, (mJ/PULSE)
on
rr
G
T
= 150°C
j
Inductive Load, Per Pulse
2
10
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
t
d(on)
t
t
d(off)
r
t
f
VCC = 600V V
= ±15V
GE
I
= 800A
C
T
= 150°C
j
Inductive Load
1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS VS.
= ±15V
10
2
10
10
2
, (mJ/PULSE)
1
COLLECTOR CURRENT (TYPICAL)
3
10
VCC = 600V V
= ±15V
GE
R
= 0Ω
,
, (mJ/PULSE)
on
rr
G
T
= 125°C
j
Inductive Load, Per Pulse
2
10
SWITCHING ENERGY, E
E E E
REVERSE RECOVERY ENERGY, E
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, I
GATE RESISTANCE (TYPICAL)
3
10
,
, (mJ/PULSE)
on
rr
off
2
10
SWITCHING LOSS VS.
on
off
rr
2
10
, (AMPERES)
E
SWITCHING LOSS VS.
10
10
10
10
3
2
, (mJ/PULSE)
1
SWITCHING ENERGY, E
0
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
1
10
10
02/14 Rev. 1
E
on
E
off
E
rr
1
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, I
10
2
, (AMPERES)
E
10
SWITCHING ENERGY, E
0
10
3
VCC = 600V V
= ±15V
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
10
GE
I
= 800A
C/IE
T
= 125°C
j
Inductive Load, Per Pulse
1
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
0
10
E
on
E
off
E
rr
1
10
2
7
Page 8
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
3
10
,
, (mJ/PULSE)
on
rr
2
10
VCC = 600V V
= ±15V
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
10
GE
I
= 800A
C/IE
T
= 125°C
j
Inductive Load, Per Pulse
1
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
0
REVERSE RECOVERY CHARACTERISTICS
3
10
VCC = 600V V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
, (AMPERES)
rr
, (ns), I
rr
10
j
Inductive Load
2
t
rr
I
rr
(TYPICAL)
10
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
VCC = 600V V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
, (AMPERES)
rr
, (ns), I
rr
10
E
on
E
off
E
rr
1
10
2
REVERSE RECOVERY, t
10
j
Inductive Load
2
1
1
10
t
rr
I
rr
2
10
EMITTER CURRENT, IE, (AMPERES)
GATE CHARGE, V
GE
10
3
20
IC = 800A V
= 600V
CC
15
, (VOLTS)
GE
10
REVERSE RECOVERY, t
1
10
10
8
1
EMITTER CURRENT, IE, (AMPERES)
10
2
10
5
GATE-EMITTER VOLTAGE, V
3
0
0 500 15001000
300025002000
GATE CHARGE, QG, (nC)
02/14 Rev. 1
Page 9
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S Dual IGBT S-Series Module
800 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
th(j-c')
10
10
0
-1
(MAXIMUM)
Single Pulse T
= 25°C
C
Per Unit Base = R
=
-2
10
• (NORMALIZED VALUE)
th
= R
th
Z
th(j-c)
28 K/k/W (IGBT) R
=
th(j-c)
45 K/k/W (FWDi)
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
10-510-410-310-210
-1
10010
1
TIME, (s)
02/14 Rev. 1
9
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