Powerex CM800DY-24S Data Sheet
CM800DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
B
F E
H J
E
B
F
R
Q
T (4 PLACES)
Y
W
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.51 140.0
B 5.12 130.0
C 1.38+0.04/-0.02 35.0+1.0/-0.5
D 0.45 11.5
E 0.39 10.0
F 4.33±0.001 110.0±0.25
G 0.54 13.8
H 1.42 36.0
J 1.72 43.8
K 0.35 9.0
L 0.59 15.0
M 0.80 20.4
N 0.57 14.5
P 1.57 40.0
C2E1
X
Tr2
Di2
E2
X X
U NUTS
(3 PLACES)
E2
G
D
K
C1
Di1
Tr1
Dimensions Inches Millimeters
Q 2.56 65.0
R 0.79 20.0
S 0.32 8.0
T 0.26 Dia. 6.5 Dia.
U M8 Metric M8
V M4 Metric M4
W 0.51 13.0
X 1.02 26.0
Y 0.36 9.3
Z 0.16 4.0
AA 0.96+0.04/-0.02 24.5+1.0/-0.5
AB 0.15 3.9
AC 0.27 6.9
M
G2E2E1G1
L
N
P
N
V NUTS (4 PLACES)
AB AC
Z
G2
E2
C1
E1
G1
LABEL
AA
S
Dual IGBT
S-Series Module
800 Amperes/1200 Volts
Description:
Powerex Dual IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM800DY-24S is a
1200V (V
IGBT Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 800 24
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Heat Sinking
), 800 Ampere Dual
CES
CES
102/14 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S
Dual IGBT S-Series Module
800 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (G-E Short-Circuited) V
Gate-Emitter Voltage (C-E Short-Circuited) V
Collector Current (DC, TC = 117°C)
*2,*4
IC 790 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current*2 I
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature, Instantaneous Event (Overload) T
Case Temperature*4 T
Operating Junction Temperature, Continuous Operation (Under Switching) T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
100.9
87.1
42.9
29.1
1200 Volts
CES
±20 Volts
GES
1600 Amperes
CRM
5355 Watts
tot
*1
790 Amperes
E
*1
1600 Amperes
ERM
2500 Volts
ISO
175 °C
j(max)
125 °C
C(max)
-40 ~ +150 °C
j(opr)
-40 ~ +125 °C
stg
Tr2
Di2
Tr2
Di2
Tr1
Di1
Tr1
Di1
Tr2
Di2
Tr2
Di2
Di1
Tr1
Di1
Tr1
0
0 28.8
97.2
42
84
2
02/14 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM800DY-24S
Dual IGBT S-Series Module
800 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 800A, VGE = 15V, Tj = 125°C*5 — 2.25 — Volts
IC = 800A, VGE = 15V, Tj = 150°C*5 — 2.35 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 800A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 800A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 800A, VGE = 15V — 1868 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 800A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 800A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts
IE = 800A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts
Emitter-Collector Voltage V
(Chip) IE = 800A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 800A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 800A, — 107 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 2.45 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 80mA, VCE = 10V 5.4 6.0 6.6 Volts
GE(th)
IC = 800A, VGE = 15V, Tj = 25°C*5 — 1.95 2.40 Volts
CE(sat)
IC = 800A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 80 nF
ies
VCE = 10V, G-E Short-Circuited — — 16 nF
oes
— — 1.32 nF
res
— — 800 ns
d(on)
RG = 0Ω, Inductive Load — — 600 ns
d(off)
*1
IE = 800A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts
EC
*1
IE = 800A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 800A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load — 42.8 — µC
rr
VGE = ±15V, RG = 0Ω, — 82 — mJ
off
*1
Tj = 150°C, Inductive Load — 71 — mJ
rr
CC' + EE'
Main Terminals-Chip, — — 0.4 mΩ
, G-E Short-Circuited — — 1.0 mA
CES
, C-E Short-Circuited — — 0.5 µA
GES
*2
02/14 Rev. 1
3
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