POWEREX CM800DU-12H Datasheet

CM800DU-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

"R" (4 PLACES)

BEE

"S" (3 PLACES)

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12 130.0
B 5.12 130.0
C 1.38 35.0
D 0.96 24.5
E 4.33 110.0
F 0.39 10.0
G 0.39 10.0
H 0.81 20.5

J 0.53 14.5

C2E1

E2

E2

ML

Q

Dimensions Inches Millimeters

F

G

C1

H

J

K

J

"T" (4 PLACES)

D

G2
E2

E1
G1

C

G2E2E1G1

C1

N

P

K 1.57 40.0

L 1.42 36.0
M 1.72 43.8
N 0.54 13.8

P 0.45 11.5
Q 5.51 140.0
R 0.26 Dia. 6.5 Dia.

SM8 M8

TM4 M4

Dual IGBTMOD™
U-Series Module

800 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM800DU-12H is a
600V (V
IGBTMOD™ Power Module.

Type Amperes Volts (x 50)

CM 800 12

CE(sat)

Free-Wheel Diode
Heat Sinking

), 800 Ampere Dual

CES

Current Rating V

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM800DU-12H
Dual IGBTMOD™ U-Series Module

800 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM800DU-12H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 1200 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts
800 Amperes

1600* Amperes

800 Amperes

1600* Amperes

1500 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES VGE

GE(th)

CE(sat) IC

VCE = V

, VGE = 0V ––2mA

CES

= V

, VCE = 0V ––0.5 µA

GES

IC = 80mA, VCE = 10V 4.5 6 7.5 Volts

= 800A, VGE = 15V, Tj = 25°C – 2.55 3.15 Volts

IC = 800A, VGE = 15V, Tj = 125°C – 2.75 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G VCC

EC

= 300V, IC = 800A, VGE = 15V – 1600 – nC

IE = 800A, VGE = 0V ––2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on) VCC

r VGE1

d(off) RG

f

rr IE

rr IE

VCE = 10V, VGE = 0V ––38.4 nf

= 300V, IC = 800A, – – 400 ns

= V

GE2

= 3.1⍀, Resistive ––500 ns
Load Switching Operation ––300 ns
= 800A, diE/dt = -1600A/µs –– 160 ns
= 800A, diE/dt = -1600A/µs – 1.92 – µC

= 15V, ––2000 ns

––70.4 nf

––10.4 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

2

2

Q Per IGBT 1/2 Module ––0.083 °C/W

th(j-c)

R Per FWDi 1/2 Module ––0.13 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.010 – °C/W