CM75TX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
AE
AC
A
E
F
G
K
K
JMMM T
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
H
L
X
53
54
K
55
K
56
57
58
59
K
60
K
61
12345678910111213141516171819202122
LLLLL
P(54~56)
UP(1)
G
E
UP(2)
U(48~50) V(42~44) W(36~38)
G
UN(5)
N(59~61)
K
K
D
DETAIL "A"
KQ
DETAIL "B"
VP(9)
G
E
VP(10)
G
VN(13)
K
K
K
K
KKKKKK
U
Y
K
K
G
E
G
EWN(22)EVN(14)EUN(6)
H
30
29
28
27
26
25
24
23
W
WP(17)
WP(18)
WN(21)
V
S
R B
L
N (4 PLACES)
P
P1(28~30)
N1(23~25)
TH1
(31)
AA
AB
K
AD
DETAIL "A"
C
Z
AJ
AH
AG
DETAIL "B"
TH
2
(32)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.65 118.1
E 4.33±0.02 110.0±0.5
F 3.9 99.0
G 3.72 94.5
H 0.61 15.415
J 1.125 28.575
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.30 58.4
Q 0.21 5.34
R 1.97±0.02 50.0±0.5
S 2.26 57.5
Dimensions Inches Millimeters
U 0.285 7.245
V 0.018 0.45
W 0.625 15.865
X 0.14 3.5
Y 0.03 0.8
Z 0.28 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.03 0.65
AD 0.05 1.15
AE 0.29 7.4
AF 0.05 6.2
AG 0.49 12.5
AH 0.06 1.5
AJ 0.17 Dia. 4.3 Dia.
AK 0.10 Dia. 2.5 Dia.
AL 0.08 Dia. 2.1 Dia.
T 0.465 11.805
Six IGBTMOD™
NX-S Series Module
75 Amperes/1200 Volts
AF
AK
AL
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75TX-24S is a 1200V (V
75 Ampere Six-IGBTMOD™ Power
Module.
Type Current Rating
Amperes Volts (x 50)
CM 75 24
),
CES
V
CES
110/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TX-24S
Six IGBTMOD™ NX-S Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM75TX-24S Units
Maximum Junction Temperature T
Operating Power Device Junction Temperature T
Storage Temperature T
+175 °C
j(max)
-40 to 150 °C
j(op)
-40 to 125 °C
stg
Mounting Torque, M5 Mounting Screws — 31 in-lb
Module Weight (Typical) — 270 Grams
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
2500 V
ISO
rms
Inverter Sector
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 122°C)
*1,*5
IC 75 Amperes
Collector Current (Pulse)*4 I
Total Power Dissipation (TC = 25°C)
Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)
*1,*5
P
*1,*5
I
Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
j(max)
) rating.
j(max)
rating.
1200 Volts
CES
±20 Volts
GES
150 Amperes
CRM
600 Watts
tot
*3
75 Amperes
E
*3
150 Amperes
ERM
2 10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TX-24S
Six IGBTMOD™ NX-S Series Module
75 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Chip) IC = 75A, VGE = 15V, Tj = 125°C — 1.9 — Volts
IC = 75A, VGE = 15V, Tj = 150°C — 1.95 — Volts
Collector-Emitter Saturation Voltage V
(Terminal) IC = 75A, VGE = 15V, Tj = 125°C*6 — 2.0 — Volts
IC = 75A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V — 175 — nC
Inductive Turn-on Delay Time t
Load Turn-on Rise Time tr VCC = 600V, IC = 75A, *7 — — 200 ns
Switch Turn-off Delay Time t
Time Turn-off Fall Time tf RG = 36Ω, Inductive Load, — — 300 ns
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Loss per Pulse Eon VCC = 600V, IC (IE) = 75A, *7 — 12.5 — mJ
Turn-off Switching Loss per Pulse E
Reverse Recovery Loss per Pulse E
Emitter-Collector Voltage V
(Chip) IE = 75A, VGE = 0V, Tj = 125°C — 1.7 — Volts
IE = 75A, VGE = 0V, Tj = 150°C — 1.7 — Volts
Emitter-Collector Voltage V
(Terminal) IE = 75A, VGE = 0V, Tj = 125°C*6 — 1.8 — Volts
IE = 75A, VGE = 0V, Tj = 150°C*6 — 1.8 — Volts
VCE = V
CES
±VGE = V
GES
IC = 7.5mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 75A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts
CE(sat)
IC = 75A, VGE = 15V, Tj = 25°C*6 — 1.8 2.25 Volts
CE(sat)
— — 7.5 nF
ies
VGE = 0V, VCE = 10V — — 1.5 nF
oes
— — 0.13 nF
res
— — 300 ns
d(on)
VGE = ±15V, — — 600 ns
d(off)
*3
IE = 75A — — 300 ns
rr
*3
— 4.0 — µC
rr
VGE = ±15V, RG = 36Ω, — 8 — mJ
off
*3
Tj = 150°C, Inductive Load — 4.5 — mJ
rec
*3
IE = 75A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts
EC
*3
IE = 75A, VGE = 0V, Tj = 25°C*6 — 1.8 2.25 Volts
EC
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*1 R
Thermal Resistance, Junction to Case*1 R
Internal Gate Resistance rg Per Switch — 0 — Ω
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.
Q Per IGBT — — 0.25 K/W
th(j-c)
D Per FWDi — — 0.4 K/W
th(j-c)
310/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TX-24S
Six IGBTMOD™ NX-S Series Module
75 Amperes/1200 Volts
NTC Thermistor Sector, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R
B Constant B
Approximate by Equation*9 — 3375 — K
(25/50)
= 493Ω –7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C — — 10 mW
Module, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Lead Resistance (Main Terminals-Chip) R
Contact Thermal Resistance*1 R
(Case to Heatsink) (Per 1 Module)
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*9 B
(25/50)
R
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
= In(
R
25
)/( 1 –
50 T25 T50
1
) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],
TC = 25°C (Per Switch) — — 2.4 mΩ
lead
Thermal Grease Applied — 0.015 — K/W
th(c-f)
*2
4 10/10 Rev. 1
Loading...