POWEREX CM75TU-34KA Datasheet
CM75TU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
T
C
Measuring
Point
EB
W - THICK x X - WIDE
TAB (12 PLACES)
C
S - NUTS
(5 TYP)
G
UPEU
L
CM
P
GUN
J
K
N
GVP
N
E
U
N
U
J
L LN NAL
K
R
P
W
PEVPGWP
E
NL L
M
GVNEVNE
V
D
GWN
W
J
W
N
T - (4 TYP.)
P
Q
R
V
F
T
C
Measuring
Point
H
G
Six IGBTMOD™
KA-Series Module
75 Amperes/ 1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
P
U
P
G
E
U
P
U
U
N
G
EUN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.54±0.01 90.0±0.25
E 3.15±0.01 80.0±0.25
F 0.16 4.0
G 1.02 26.0
H 0.31 8.1
J 0.91 23.0
K 0.47 12.0
L 0.43 11.0
V
P
G
E
V
P
V
G
V
N
V
N
E
W
P
G
E
W
P
W
G
W
N
W
N
E
Dimensions Inches Millimeters
M 0.57 14.4
N 0.85 21.7
P 0.67 17.0
Q 1.91 48.5
R 0.15 3.75
SM5 M5
T 0.26 Dia. 6.5 Dia.
V 0.03 0.8
W 0.02 0.5
X 0.110 2.79
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-34KA is a
1700V (V
), 75 Ampere Six-
CES
IGBT IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 75 34
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-34KA
Six IGBTMOD™ KA-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75TU-34KA Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Ter minal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1700 Volts
±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
660 Watts
3500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 7.5mA, VCE = 10V 4.0 5.5 7.0 Volts
IC = 75A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts
IC = 75A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
G
EC
VCC = 1000V, IC = 75A, VGE = 15V – 340 – nC
IE = 75A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 75A, VGE = 0V, Tj = 125°C– 2.2 – Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
VCE = 10V, VGE = 0V – – 1.8 nf
VCC = 1000V, IC = 75A, – – 100 ns
V
= V
GE1
= 15V, – – 100 ns
GE2
RG = 4.2⍀, Resistive – – 400 ns
Inductive Load – – 800 ns
Switching Operation – – 200 ns
rr
IE = 75A – 5.3 – µC
––10.5 nf
––0.55 nf
2
2
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