POWEREX CM75TF-24H Datasheet
CM75TF-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
B
Z - M5 THD
(7 TYP.)
U
W
D
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B
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PBvPBwP
u
PEvPEwP
P
u
NBvNBwN
u
NEvNEwN
B
E
TYP
J
K
AA
JH
UVW
N
P
BuP
EuP
u
BuN
EuN
N
N
P
N
M
E
BvP
EvP
v
BvN
EvN
S
P
R
L
C A
F
T
G
Y - DIA.
AAM
(4 TYP.)
V
BwP
EwP
w
BwN
EwN
.110 TAB
P
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 3.543±0.01 90.0±0.25
D 3.15±0.01 80.0±0.25
E1.57 40.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max
J 1.18 30.0
K 0.98 25.0
L 0.96 24.5
M 0.79 20.0
Dimensions Inches Millimeters
P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5
W 0.24 Rad. Rad. 6.0
X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5
AA 0.08 2.0
N 0.67 17.0
Six-IGBT IGBTMOD™
H-Series Module
75 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-24H
is a 1200V (V
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating V
CM 75 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 75 Ampere
CES
Amperes Volts (x 50)
CES
339
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TF-24H
Six-IGBT IGBTMOD™ H-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75TF-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 830 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
600 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
A
IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 75A, VGE = 15V – 2.5 3.4** Volts
IC = 75A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 75A, VGS = 15V – 375 – nC
IE = 75A, VGS = 0V – – 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Time Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 5.3 nF
VCC = 600V, IC = 75A, – – 350 ns
V
= V
GE1
= 15V, RG = 4.2Ω – – 250 ns
GE2
IE = 75A, diE/dt = –150A/µs – – 250 ns
IE = 75A, diE/dt = –150A/µs – 0.56 –
–– 15nF
– – 3 nF
– – 150 ns
– – 350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.025 °C/W
Per IGBT – – 0.21 °C/W
Per FWDi – – 0.47 °C/W
340
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