Powerex CM75RX-34SA Data Sheet

CM75RX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

www.pwrx.com

AT

BE

AH

Q

C

P(21)

GuP(20)

EuP(19)

U(1)

GuN(18)

N(22)

AV

AU

DETAIL "B"

AM

BD

AA

P

M

N

E

DETAIL "B"

GvP(16)

EvP(15)

V(2) W(3)

GvN(14)

K

BB

BA

Y

K

W

V

AB (4 PLACES)

21

22

H

GwP(12)

EwP(11)

GwN(10)

EwN(9)EvN(13)EuN(17)

U

AF (6 PLACES)

1 2 3 4

X

B(4)

GB(6)

EB(5)

T

S

R

L

BB

Y

BB BB

Y

Y

A
D
F

G

DETAIL "C"

TH

TH1

2

(7)

(8)

NTC

BB

Y

DETAIL "A"

ZZZ

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

BC

BA

Y

10 912 1114 1316 1518 1720 19

8
7

6
5

AC

AD

AE

AR

AS

AP

DETAIL "A"

AW

AX

DETAIL "C"

Y

B

AQ

K

AE

AM

AZ

AY

Y

AL

AJ

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.39 136.9

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 4.79 121.7

E 0.45 11.5

F 4.33±0.02 110.0±0.5

G 3.72 94.5

H 0.53 13.5

J 0.23 5.9

K 0.30 7.75

L 0.53 13.64

M 3.02 77.1

N 1.53 39.0

P 0.87 22.0

Q 0.65 16.5

R 0.55 14.0

S 0.47 12.0

T 0.24 6.0

U 0.31 8.0

V 0.37 6.5

W 0.61 15.64

X 0.81 20.71

Y 0.15±0.008 3.81±0.2

Z 0.9 22.86

AA 0.14 3.5

AB 0.22 Dia. 5.5 Dia.

Dimensions Inches Millimeters

AC 1.97±0.02 50.0±0.5

AD 2.26 57.5

AE 0.14 3.75

AF M5 M5

AG 0.27 7.0

AH 0.67 17.0

AJ 0.44±0.008 11.67±0.2

AK 0.81 20.5

AL 0.60±0.008 15.24±0.2

AM 0.12 3.0

AN 0.53 13.4

AP 0.49 12.5

AQ 0.18 Dia. 4.5 Dia.

AR 0.102 Dia. 2.6 Dia.

AS 0.088 Dia. 2.25 Dia.

AT 0.05 1.2

AU 0.02 0.65

AV 0.04 1.15

AW 0.54 13.7

AX 0.51 13.0

AY 0.75 19.12

AZ 0.021±0.008 0.55±0.2

BA 0.28±0.008 7.24±0.2

BB 0.43±0.008 11.42±0.2

BC 0.46±0.008 11.8±0.2

BD 0.15 3.81

BE 0.18 4.5

AW

Six IGBT + Brake
NX-Series Module

75 Amperes/1700 Volts

45°

AE

AK

AX

AG

Description:

Powerex IGBT Modules are

J

AN

designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with free­wheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM75RX-34SA is a 1700V (V

CES

),
75 Ampere Six-IGBT + Brake
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 75 34

V

CES

102/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 75 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

1700 Volts

CES

±20 Volts

GES

150 Amperes

CRM

830 Watts

tot

*1

75 Amperes

E

*1

150 Amperes

ERM

Brake Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 50 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage (VGE = 0V) V

Forward Current*2 I

Forward Current (Pulse, Repetitive)*3 I

1700 Volts

CES

±20 Volts

GES

100 Amperes

CRM

600 Watts

tot

1700 Volts

RRM

*1

50 Amperes

F

*1

100 Amperes

FRM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

31.2

(Tr/UN, VN)

(Di/UP, VP, WP)

4000 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 ~ +150 °C

j(op)

-40 ~ +125 °C

stg

99.0

22.9

33.7052.6

63.4

91.5

80.7

102.3

Tr

39.6

28.8

20.6

0 0

Tr
UP

Tr

Di

UN

UP

Di

UN

0

22.2

33.0

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

Tr

Th

VP

Di

VP

51.9

Tr

WP

Di

WN

Tr

VN

Di

VN

62.7

Br

Di

Di

WP

WN

Tr
Br

92.1

80.0

103.3

LABEL SIDE

40.7

37.0

34.0

26.2

22.0

2

02/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 75A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 75A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 75A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 75A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 75A, VGE = 15V — 414 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 75A, VGE = ±15V, — — 100 ns

Turn-off Delay Time t

Fall Time tf — — 600 ns

Emitter-Collector Voltage V

(Terminal) IE = 75A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IE = 75A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Emitter-Collector Voltage V

(Chip) IE = 75A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IE = 75A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 75A, — 17.1 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 0 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 7.5mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 75A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 75A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 20 nF

ies

VCE = 10V, VGE = 0V — — 1.6 nF

oes

— — 0.36 nF

res

— — 200 ns

d(on)

RG = 10Ω, Inductive Load — — 700 ns

d(off)

*1

IE = 75A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

EC

*1

IE = 75A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

EC

*1

VCC = 1000V, IE = 75A, VGE = ±15V — — 200 ns

rr

*1

RG = 10Ω, Inductive Load — 2.0 — µC

rr

VGE = ±15V, RG = 10Ω, — 23.0 — mJ

off

*1

Tj = 150°C, Inductive Load — 15.9 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 4.0 mΩ

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

*4

99.0

22.9

33.7052.6

Tr

39.6

31.2

(Tr/UN, VN)

28.8

(Di/UP, VP, WP)

20.6

0 0

Tr

VP

UP

Di

UP

Tr

Tr

Di

VN

UN

VP

Di

Di

VN

UN

63.4

80.7

Tr

WP

Di

WP

LABEL SIDE

91.5

102.3

Th

Tr

Di

WN

Br

Di

WN

Tr
Br

40.7

37.0

34.0

26.2

22.0

02/14 Rev. 1

0

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

51.9

22.2

33.0

62.7

92.1

80.0

103.3

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Brake Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 50A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 50A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 50A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 50A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 50A, VGE = 15V — 276 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 50A, VGE = ±15V, — — 100 ns

Turn-off Delay Time t

Fall Time tf — — 600 ns

Reverse Current I

Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

(Terminal) IF = 50A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IF = 50A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

(Chip) IF = 50A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IF = 50A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IF = 50A, — 9.7 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Gate Resistance rg — 0 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 5mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 50A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 13 nF

ies

VCE = 10V, VGE = 0V — — 1.1 nF

oes

— — 0.24 nF

res

— — 200 ns

d(on)

RG = 13Ω, Inductive Load — — 700 ns

d(off)

VR = V

RRM

*1

VCC = 1000V, IF = 50A, VGE = ±15V — — 200 ns

rr

*1

RG = 13Ω, Inductive Load — 1.3 — µC

rr

VGE = ±15V, RG = 13Ω, — 11.2 — mJ

off

*1

Tj = 150°C, Inductive Load — 9.8 — mJ

rr

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

, VGE = 0V — — 1.0 mA

RRM

99.0

22.9

33.7052.6

Tr

39.6

31.2

(Tr/UN, VN)

28.8

(Di/UP, VP, WP)

20.6

0 0

Tr

VP

UP

Di

UP

Tr

Tr

Di

VN

UN

VP

Di

Di

VN

UN

63.4

80.7

Tr

WP

Di

WP

LABEL SIDE

91.5

102.3

Th

Tr

Di

WN

Br

Di

WN

Tr
Br

40.7

37.0

34.0

26.2

22.0

0

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

4

51.9

22.2

33.0

62.7

92.1

80.0

103.3

02/14 Rev. 1