Powerex CM75RX-34SA Data Sheet

CM75RX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

www.pwrx.com

AT

BE

AH

Q

C

P(21)

GuP(20)

EuP(19)

U(1)

GuN(18)

N(22)

AV

AU

DETAIL "B"

AM

BD

AA

P

M

N

E

DETAIL "B"

GvP(16)

EvP(15)

V(2) W(3)

GvN(14)

K

BB

BA

Y

K

W

V

AB (4 PLACES)

21

22

H

GwP(12)

EwP(11)

GwN(10)

EwN(9)EvN(13)EuN(17)

U

AF (6 PLACES)

1 2 3 4

X

B(4)

GB(6)

EB(5)

T

S

R

L

BB

Y

BB BB

Y

Y

A
D
F

G

DETAIL "C"

TH

TH1

2

(7)

(8)

NTC

BB

Y

DETAIL "A"

ZZZ

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

BC

BA

Y

10 912 1114 1316 1518 1720 19

8
7

6
5

AC

AD

AE

AR

AS

AP

DETAIL "A"

AW

AX

DETAIL "C"

Y

B

AQ

K

AE

AM

AZ

AY

Y

AL

AJ

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.39 136.9

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 4.79 121.7

E 0.45 11.5

F 4.33±0.02 110.0±0.5

G 3.72 94.5

H 0.53 13.5

J 0.23 5.9

K 0.30 7.75

L 0.53 13.64

M 3.02 77.1

N 1.53 39.0

P 0.87 22.0

Q 0.65 16.5

R 0.55 14.0

S 0.47 12.0

T 0.24 6.0

U 0.31 8.0

V 0.37 6.5

W 0.61 15.64

X 0.81 20.71

Y 0.15±0.008 3.81±0.2

Z 0.9 22.86

AA 0.14 3.5

AB 0.22 Dia. 5.5 Dia.

Dimensions Inches Millimeters

AC 1.97±0.02 50.0±0.5

AD 2.26 57.5

AE 0.14 3.75

AF M5 M5

AG 0.27 7.0

AH 0.67 17.0

AJ 0.44±0.008 11.67±0.2

AK 0.81 20.5

AL 0.60±0.008 15.24±0.2

AM 0.12 3.0

AN 0.53 13.4

AP 0.49 12.5

AQ 0.18 Dia. 4.5 Dia.

AR 0.102 Dia. 2.6 Dia.

AS 0.088 Dia. 2.25 Dia.

AT 0.05 1.2

AU 0.02 0.65

AV 0.04 1.15

AW 0.54 13.7

AX 0.51 13.0

AY 0.75 19.12

AZ 0.021±0.008 0.55±0.2

BA 0.28±0.008 7.24±0.2

BB 0.43±0.008 11.42±0.2

BC 0.46±0.008 11.8±0.2

BD 0.15 3.81

BE 0.18 4.5

AW

Six IGBT + Brake
NX-Series Module

75 Amperes/1700 Volts

45°

AE

AK

AX

AG

Description:

Powerex IGBT Modules are

J

AN

designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with free­wheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM75RX-34SA is a 1700V (V

CES

),
75 Ampere Six-IGBT + Brake
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 75 34

V

CES

102/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 75 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

1700 Volts

CES

±20 Volts

GES

150 Amperes

CRM

830 Watts

tot

*1

75 Amperes

E

*1

150 Amperes

ERM

Brake Part IGBT/Diode

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 50 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage (VGE = 0V) V

Forward Current*2 I

Forward Current (Pulse, Repetitive)*3 I

1700 Volts

CES

±20 Volts

GES

100 Amperes

CRM

600 Watts

tot

1700 Volts

RRM

*1

50 Amperes

F

*1

100 Amperes

FRM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

31.2

(Tr/UN, VN)

(Di/UP, VP, WP)

4000 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 ~ +150 °C

j(op)

-40 ~ +125 °C

stg

99.0

22.9

33.7052.6

63.4

91.5

80.7

102.3

Tr

39.6

28.8

20.6

0 0

Tr
UP

Tr

Di

UN

UP

Di

UN

0

22.2

33.0

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

Tr

Th

VP

Di

VP

51.9

Tr

WP

Di

WN

Tr

VN

Di

VN

62.7

Br

Di

Di

WP

WN

Tr
Br

92.1

80.0

103.3

LABEL SIDE

40.7

37.0

34.0

26.2

22.0

2

02/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 75A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 75A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 75A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 75A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 75A, VGE = 15V — 414 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 75A, VGE = ±15V, — — 100 ns

Turn-off Delay Time t

Fall Time tf — — 600 ns

Emitter-Collector Voltage V

(Terminal) IE = 75A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IE = 75A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Emitter-Collector Voltage V

(Chip) IE = 75A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IE = 75A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 75A, — 17.1 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 0 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 7.5mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 75A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 75A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 20 nF

ies

VCE = 10V, VGE = 0V — — 1.6 nF

oes

— — 0.36 nF

res

— — 200 ns

d(on)

RG = 10Ω, Inductive Load — — 700 ns

d(off)

*1

IE = 75A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

EC

*1

IE = 75A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

EC

*1

VCC = 1000V, IE = 75A, VGE = ±15V — — 200 ns

rr

*1

RG = 10Ω, Inductive Load — 2.0 — µC

rr

VGE = ±15V, RG = 10Ω, — 23.0 — mJ

off

*1

Tj = 150°C, Inductive Load — 15.9 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 4.0 mΩ

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

*4

99.0

22.9

33.7052.6

Tr

39.6

31.2

(Tr/UN, VN)

28.8

(Di/UP, VP, WP)

20.6

0 0

Tr

VP

UP

Di

UP

Tr

Tr

Di

VN

UN

VP

Di

Di

VN

UN

63.4

80.7

Tr

WP

Di

WP

LABEL SIDE

91.5

102.3

Th

Tr

Di

WN

Br

Di

WN

Tr
Br

40.7

37.0

34.0

26.2

22.0

02/14 Rev. 1

0

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

51.9

22.2

33.0

62.7

92.1

80.0

103.3

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Brake Part IGBT/Diode

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 50A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 50A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 50A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 50A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 50A, VGE = 15V — 276 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 50A, VGE = ±15V, — — 100 ns

Turn-off Delay Time t

Fall Time tf — — 600 ns

Reverse Current I

Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

(Terminal) IF = 50A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IF = 50A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

(Chip) IF = 50A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IF = 50A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IF = 50A, — 9.7 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Gate Resistance rg — 0 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 5mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 50A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 13 nF

ies

VCE = 10V, VGE = 0V — — 1.1 nF

oes

— — 0.24 nF

res

— — 200 ns

d(on)

RG = 13Ω, Inductive Load — — 700 ns

d(off)

VR = V

RRM

*1

VCC = 1000V, IF = 50A, VGE = ±15V — — 200 ns

rr

*1

RG = 13Ω, Inductive Load — 1.3 — µC

rr

VGE = ±15V, RG = 13Ω, — 11.2 — mJ

off

*1

Tj = 150°C, Inductive Load — 9.8 — mJ

rr

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

, VGE = 0V — — 1.0 mA

RRM

99.0

22.9

33.7052.6

Tr

39.6

31.2

(Tr/UN, VN)

28.8

(Di/UP, VP, WP)

20.6

0 0

Tr

VP

UP

Di

UP

Tr

Tr

Di

VN

UN

VP

Di

Di

VN

UN

63.4

80.7

Tr

WP

Di

WP

LABEL SIDE

91.5

102.3

Th

Tr

Di

WN

Br

Di

WN

Tr
Br

40.7

37.0

34.0

26.2

22.0

0

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

4

51.9

22.2

33.0

62.7

92.1

80.0

103.3

02/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω*4 -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*4 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Contact Thermal Resistance, R

Case to Heatsink*2 Per 1 Module

Q Per Inverter IGBT — — 0.18 K/W

th(j-c)

D Per Inverter Diode — — 0.27 K/W

th(j-c)

Q Per Brake IGBT — — 0.25 K/W

th(j-c)

D Per Brake Diode — — 0.35 K/W

th(j-c)

Thermal Grease Applied, — 15 — K/kW

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Main Terminal, M5 Screw 22 27 31 in-lb

Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 16.3 — — mm

Terminal to Baseplate 16.8 — — mm

Clearance da Terminal to Terminal 10.0 — — mm

Terminal to Baseplate 10.0 — — mm

Weight m 370 g

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — +100 µm

Recommended Operating Conditions, Ta = 25°C

DC Supply Voltage VCC Applied Across P-N Terminals — 1000 1200 Volts

Gate-Emitter Drive Voltage V

G*P-E*P*/G*N-E*N (* = U, V, W) Terminals

External Gate Resistance R

Per Switch Brake IGBT 13 — 130 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

R

25

= In(

50 T25 T50

MOUNTING SIDE

MOUNTING SIDE

)/( 1 –

1

)

+ : CONVEX

– : CONCAVE

Y

MOUNTING

SIDE

X

– : CONCAVE

+ : CONVEX

Applied Across GB-EB/ 13.5 15.0 16.5 Volts

GE(on)

G

Per Switch Inverter IGBT 10 — 100 Ω

22.9

33.7052.6

63.4

Tr

39.6

31.2

(Tr/UN, VN)

28.8

(Di/UP, VP, WP)

20.6

0 0

Tr

VP

UP

Di
UP

0

22.2

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi Th: NTC Thermistor

Tr

Tr

Di

VN

UN

VP

Di

Di

VN

UN

51.9

33.0

62.7

99.0
LABEL SIDE

91.5

80.7

102.3

Tr

Th

Tr

WP

Di

WN

Br

Di

Di

WP

WN

Tr
Br

92.1

80.0

103.3

40.7

37.0

34.0

26.2

22.0

02/14 Rev. 1

5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

OUTPUT CHARACTERISTICS

(INVERTER PART - TYPICAL)

150

VGE = 20V

125

100

, (AMPERES)

C

15

75

50

25

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

(Chip)

, (AMPERES)

E

2

10

11

10

9

8

Tj = 25°C

(Chip)

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

4.5

Tj = 25°C
T
T

(Chip)

, (VOLTS)

CE(sat)

4.0

3.5

3.0

2.5

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

(INVERTER PART - TYPICAL)

2

10

, (nF)

10

res

, C

oes

, C

ies

10

VGE = 0V

1

0

COLLECTOR-EMITTER

= 125°C

j

= 150°C

j

CAPACITANCE VS. V

CE

C

C

15075 100 12525 50

ies

oes

EMITTER CURRENT, I

1

10

0 1 3 652 4

EMITTER-COLLECTOR VOLTAGE, V

6

, (VOLTS)

EC

-1

10

CAPACITANCE, C

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

10

C

res

0

10

1

10

2

02/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

4

10

3

10

2

10

10

10

1

0

10

VCC = 1000V
V

= ±15V

GE

R

= 10Ω

G

T

= 125°C

j

Inductive Load

0

COLLECTOR CURRENT, I

SWITCHING TIME, (ns)

(INVERTER PART - TYPICAL)

4

10

HALF-BRIDGE

t

d(off)

t

f

t

d(on)

t

r

1

10

, (AMPERES)

C

SWITCHING TIME VS.

GATE RESISTANCE

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(INVERTER PART - TYPICAL)

4

10

3

10

2

10

SWITCHING TIME, (ns)

10

2

10

VCC = 1000V

1

V

GE

R

G

T

= 150°C

j

Inductive Load

0

0

10

= ±15V

= 10Ω

COLLECTOR CURRENT, IC, (AMPERES)

t

d(off)

t

d(on)

t

f

t

r

10

1

10

2

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

4

10

3

10

10

SWITCHING TIME, (ns)

10

02/14 Rev. 1

2

1

t

f

t

d(on)

t

r

-1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

10

t

d(off)

VCC = 1000V
V

= ±15V

GE

I

= 75A

C

T

= 125°C

j

Inductive Load

0

10

1

10

2

3

10

10

SWITCHING TIME, (ns)

10

2

1

t

f

t

d(on)

t

r

-1

10

EXTERNAL GATE RESISTANCE, R

10

0

t

d(off)

VCC = 1000V
V

= ±15V

GE

I

= 75A

C

T

= 150°C

j

Inductive Load

1

10

, (Ω)

G

10

2

7

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

VCC = 1000V
V

= ±15V

GE

R

= 10Ω

(ns)

rr

(A), t

rr

10

REVERSE RECOVERY, I

10

G

T

= 125°C

j

Inductive Load

2

1

0

10

I

rr

t

rr

EMITTER CURRENT, IE, (AMPERES)

GATE CHARGE VS. V

20

IC = 75A
V

= 1000V

CC

16

, (VOLTS)

GE

12

8

1

10

(INVERTER PART)

GE

10

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

(ns)

rr

(A), t

rr

10

REVERSE RECOVERY, I

10

2

VCC = 1000V
V

GE

R

= 10Ω

G

T

= 150°C

j

Inductive Load

2

1

0

10

= ±15V

I

rr

t

rr

10

EMITTER CURRENT, I

1

, (AMPERES)

E

10

2

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

, (mJ)

off

, E

10

on

10

3

VCC = 1000V
V

= ±15V

GE

R

= 10Ω

G

T

= 125°C

j

Inductive Load,

2

Per Pulse

1

E

on

E

off

E

rr

10

10

10

2

1

0

, (mJ)

rr

4

GATE-EMITTER VOLTAGE, V

0

100 600500300 400200

0

8

GATE CHARGE, QG, (nC)

SWITCHING ENERGY, E

0

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

10

REVERSE RECOVERY ENERGY, E

-1

1

10

10

2

02/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

HALF-BRIDGE SWITCHING

(INVERTER PART - TYPICAL)

3

10

VCC = 1000V
V

= ±15V

GE

R

= 10Ω

, (mJ) SWITCHING ENERGY, E

off

, E

10

on

10

SWITCHING ENERGY, E

10

G

T

= 150°C

j

Inductive Load,

2

Per Pulse

1

0

0

10

COLLECTOR CURRENT, IC, (AMPERES)

E

on

E

off

E

rr

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

(INVERTER PART - TYPICAL)

2

10

CHARACTERISTICS

1

10

CHARACTERISTICS

10

10

10

10

10

2

2

, (mJ)

rr

1

0

REVERSE RECOVERY ENERGY, E

-1

2

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

VCC = 1000V
V

= ±15V

GE

I

= 75A

C

T

= 125°C

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

10

j

Inductive Load,
Per Pulse

0

1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

IMPEDANCE CHARACTERISTICS

(INVERTER PART - MAXIMUM)

0

th(j-c')

10

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(INVERTER PART - TYPICAL)

2

10

TRANSIENT THERMAL

E

on

E

off

E

rr

3

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

VCC = 1000V
V

= ±15V

GE

I

= 75A

C

T

= 150°C

j

REVERSE RECOVERY ENERGY, E

10

Inductive Load,
Per Pulse

0

1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

10

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

• (NORMALIZED VALUE)

-2

10

th

= R

E

on

E

off

E

rr

2

10

3

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

-5

10

-3

-4

10

10-210-110010

TIME, (s)

th(j-c)

0.18 K/W
(IGBT)
R

=

th(j-c)

0.27 K/W
(FWDi)

1

02/14 Rev. 1

9

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

SATURATION VOLTAGE CHARACTERISTICS

(BRAKE PART - TYPICAL)

4.5

Tj = 25°C
T
T

(Chip)

, (VOLTS)

CE(sat)

4.0

3.5

3.0

2.5

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING CHARACTERISTICS

(BRAKE PART - TYPICAL)

4

10

10

10

VCC = 1000V
V

GE

R

= 13Ω

G

3

T

= 125°C

j

Inductive Load

2

= ±15V

COLLECTOR-EMITTER

= 125°C

j

= 150°C

j

HALF-BRIDGE

t

d(off)

t

f

t

d(on)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(BRAKE PART - TYPICAL)

2

10

(Chip)

, (VOLTS)

F

1

10

FORWARD VOLTAGE, V

0

10

1007525 50

0 2 3 4 51 6

FORWARD CURRENT I

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

, (AMPERES)

F

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(BRAKE PART - TYPICAL)

4

10

t

10

10

3

2

d(off)

t

f

t

d(on)

t

r

SWITCHING TIME, (ns)

10

10

10

1

0

0

10

COLLECTOR CURRENT, I

10

10

1

0

10

VCC = 1000V
V

= ±15V

GE

R

= 13Ω

G

T

= 150°C

j

Inductive Load

0

COLLECTOR CURRENT, IC, (AMPERES)

10

1

10

2

02/14 Rev. 1

t

r

10

1

C

, (AMPERES)

10

2

SWITCHING TIME, (ns)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

4

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

EXTERNAL GATE RESISTANCE, R

HALF-BRIDGE SWITCHING

(BRAKE PART - TYPICAL)

2

10

SWITCHING TIME VS.

GATE RESISTANCE
(BRAKE - TYPICAL)

t

d(off)

t

d(on)

t

f

t

r

VCC = 1000V
V

GE

I

= 50A

C

T

= 125°C

j

Inductive Load

2

10

CHARACTERISTICS

= ±15V

, (Ω)

G

10

3

10

SWITCHING TIME VS.

GATE RESISTANCE

(BRAKE - TYPICAL)

4

10

t

10

t

t

t

r

2

d(off)

d(on)

f

VCC = 1000V
V

= ±15V

GE

I

= 50A

C

T

= 150°C

j

Inductive Load

10

3

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(BRAKE PART - TYPICAL)

1

10

2

10

1

, (mJ)

off

, E

on

10

1

VCC = 1000V
V

= ±15V

GE

R

= 13Ω

G

T

= 125°C

j

Inductive Load,
Per Pulse

E

SWITCHING ENERGY, E

0

10

0

10

on

E

off

E

rr

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CURRENT, IF, (AMPERES)

10

10

, (mJ)

rr

, (mJ)

off

, E

on

0

10

1

VCC = 1000V
V

= ±15V

GE

R

= 13Ω

G

T

= 150°C

j

10

, (mJ)

rr

0

Inductive Load,
Per Pulse

E

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

-1

1

10

10

2

10

0

0

10

on

E

off

E

rr

1

10

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CURRENT, IF, (AMPERES)

10

REVERSE RECOVERY ENERGY, E

-1

10

2

02/14 Rev. 1

11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(BRAKE PART - TYPICAL)

2

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

0

10

1

10

EXTERNAL GATE RESISTANCE, R

REVERSE RECOVERY CHARACTERISTICS

(BRAKE PART - TYPICAL)

3

10

VCC = 1000V
V

= ±15V

GE

R

= 13Ω

(ns)

rr

(A), t

rr

G

T

= 125°C

j

Inductive Load

10

VCC = 1000V
V
I

C/IF

T

j

Inductive Load,
Per Pulse

2

= ±15V

GE

= 50A

= 125°C

E

on

E

off

E

rr

, (Ω)

G

10

10

, (mJ)

rr

, (mJ)

off

, E

on

10

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

3

10

10

(ns)

rr

(A), t

rr

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(BRAKE PART - TYPICAL)

2

VCC = 1000V
V

1

= ±15V

GE

I

= 50A

C/IF

T

= 150°C

j

Inductive Load,
Per Pulse

E

on

E

off

E

0

1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

10

2

rr

REVERSE RECOVERY CHARACTERISTICS

(BRAKE PART - TYPICAL)

3

VCC = 1000V
V

= ±15V

GE

R

= 13Ω

G

T

= 150°C

j

Inductive Load

10

3

2

10

REVERSE RECOVERY, I

1

10

10

12

0

FORWARD CURRENT, I

10

1

, (AMPERES)

F

2

10

I

rr

t

rr

2

10

REVERSE RECOVERY, I

1

10

0

10

FORWARD CURRENT, IF, (AMPERES)

10

1

I

rr

t

rr

2

10

02/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75RX-34SA
Six IGBT + Brake NX-Series Module

75 Amperes/1700 Volts

TRANSIENT THERMAL

th(j-c')

10

IMPEDANCE CHARACTERISTICS

(BRAKE PART - MAXIMUM)

0

10

TEMPERATURE CHARACTERISTICS

(NTC THERMISTOR PART - TYPICAL)

2

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

• (NORMALIZED VALUE)

-2

10

th

= R

th

Z

th(j-c)

0.25 K/W
(IGBT)
R

=

th(j-c)

0.35 K/W
(FWDi)

-3

10

-5

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

10

-4

-3

10

10-210-110010

TIME, (s)

1

10

0

10

RESISTANCE, R (kΩ)

-1

10

1

-50 25 50 100750-25

125

TEMPERATURE, T (°C)

02/14 Rev. 1

13