
CM75E3U-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
K KM
D
Q -
(2 PLACES)
U T
J
E2 G2
#110
TAB
E
H
F
R
S
L
N
B
G
C
P - NUTS
(3 PLACES)
.47 [12mm] DEEP
CM
C2E1 E2 C1
T
Chopper IGBTMOD™
U-Series Module
75 Amperes/ 600 Volts
Description:
Powerex Chopper IGBTMOD™
Modules are designed for use in
switching applications. Each module
consists of one IGBT Transistor
having a reverse-connected superfast recovery free-wheel diode and
an anode-collector connected superfast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
C2E1
E2
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.51 13.0
H 0.02 0.5
J 0.53 13.5
K 0.91 23.0
G2
E2
C1
Dimensions Inches Millimeters
L 0.84 21.2
M 0.67 17.0
N 0.28 7.0
PM5 M5
Q0.26 Dia. 6.5 Dia.
R 0.02 4.0
S 0.30 7.5
T 0.63 16.0
U 0.98 25.0
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ High Frequency Operation
(15-20kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ DC Motor Control
□ Boost Regulator
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75E3U-12H is a
600V (V
), 75 Ampere Chopper
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 75 12
CES
107
107

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75E3U-12H
Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75E3U-12H Units
Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Ter minal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
310 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts
IC = 75A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 75A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
G
EC
FM
VCC = 300V, IC = 75A, VGE = 15V – 150 – nC
IE = 75A, VGE = 0V – – 2.6 Volts
IF = 75A, Clamp Diode Part – – 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
rr
rr
VCE = 10V, VGE = 0V – – 3.6 nf
VCC = 300V, IC = 75A, – – 100 ns
V
= V
GE1
GE2
RG = 8.3V, Resistive – – 200 ns
Load Switching Operation – – 300 ns
IE = 75A, diE/dt = -150A/µs – – 160 ns
IE = 75A, diE/dt = -150A/µs – 0.18 – µC
IF = 75A, Clamp Diode Part – – 160 ns
diF/dt = -150A/µs – 0.18 – µC
= 15V, – – 250 ns
– – 6.6 nf
––1nf
108
108

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75E3U-12H
Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT Module – – 0.4 °C/W
th(j-c)
D Per FWDi Module – – 0.9 °C/W
th(j-c)
th(j-c)
Per Module, Thermal Grease Applied – 0.035 – °C/W
th(c-f)
Clamp Diode Part – – 0.9 °C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
150
125
100
, (AMPERES)
C
75
50
25
COLLECTOR CURRENT, I
0
10
8
, (VOLTS)
CE(sat)
6
o
Tj = 25
C
VGE = 20V
15
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
Tj = 25°C
IC = 75A
14
(TYPICAL)
13
12
11
10
9
8
IC = 150A
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 30A
150
125
100
, (AMPERES)
C
TRANSFER CHARACTERISTICS
VCE = 10V
= 25°C
T
j
T
= 125°C
j
(TYPICAL)
75
50
25
COLLECTOR CURRENT, I
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V
(TYPICAL)
, (VOLTS)
EC
SATURATION VOLTAGE CHARACTERISTICS
5
)
4
, (VOLTS
CE(sat)
3
COLLECTOR-EMITTER
VGE = 15V
Tj = 25°C
T
= 125°C
j
(TYPICAL)
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
0 40 80 120
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
2
10
VGE = 0V
f = 1MHz
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
(TYPICAL)
0
10
1
10
160
CE
C
ies
C
oes
C
res
2
10
109
109

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
CM75E3U-12H
Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
SWITCHING CHARACTERISTICS
3
10
VCC = 300V
V
= ±15V
GE
R
= 8.3Ω
G
T
= 125°C
j
2
10
1
10
SWITCHING TIME, (ns)
0
10
0
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
-3
10
1
th(j-c)
10
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
HALF-BRIDGE
(TYPICAL)
t
d(off)
t
f
t
d(on)
t
r
1
10
TRANSIENT THERMAL
(IGBT)
-2
10
th(j-c)
-1
= 0.4°C/W
REVERSE RECOVERY CHARACTERISTICS
3
10
di/dt = -150A/µsec
T
= 25°C
, (ns)
REVERSE RECOVERY TIME, t
2
10
j
rr
2
10
1
10
0
10
IMPEDANCE CHARACTERISTICS
0
10
1
10
-1
10
-2
10
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
(TYPICAL)
t
rr
I
rr
1
EMITTER CURRENT, IE, (AMPERES)
10
TRANSIENT THERMAL
(FWDi)
-2
10
10
th(j-c)
-1
= 0.9°C/W
0
10
2
10
10
, (AMPERES)
rr
1
20
15
, (VOLTS)
GE
10
5
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
2
10
1
10
10
10
0
-1
-2
0 50 100
GATE CHARGE, V
IC = 75A
GATE CHARGE, QG, (nC)
GE
VCC = 200V
VCC = 300V
150 200
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-3
-4
10
10
-3
10
110
110