POWEREX CM75E3U-12H Datasheet

CM75E3U-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
K KM
D
Q -
(2 PLACES)
U T
J
E2 G2
#110 TAB
E
H
F
R
S
L
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B
G
C
P - NUTS
(3 PLACES)
.47 [12mm] DEEP
CM
C2E1 E2 C1
T
Chopper IGBTMOD™ U-Series Module
75 Amperes/ 600 Volts
Description:
Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected super­fast recovery free-wheel diode and an anode-collector connected super­fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base­plate, offering simplified system assembly and thermal management.
C2E1
E2
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
J 0.53 13.5
G2 E2
C1
Dimensions Inches Millimeters
L 0.84 21.2 M 0.67 17.0 N 0.28 7.0
PM5 M5 Q0.26 Dia. 6.5 Dia. R 0.02 4.0
S 0.30 7.5
T 0.63 16.0 U 0.98 25.0
Features:
Low Drive PowerLow V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
(15-20kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
DC Motor ControlBoost Regulator
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM75E3U-12H is a 600V (V
), 75 Ampere Chopper
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 75 12
CES
107
107
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75E3U-12H Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75E3U-12H Units
Junction T emper ature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current I Emitter Current** (Tc = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (Tc = 25°C, Tj 150°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M5 Main Ter minal 31 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C 600 Volts ±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
310 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Voltage I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
CES GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts
IC = 75A, VGE = 15V, Tj = 25°C 2.4 3.0 Volts
IC = 75A, VGE = 15V, Tj = 125°C 2.6 Volts Total Gate Charge Q Emitter-Collector Voltage** V Emitter-Collector Voltage V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
G EC FM
VCC = 300V, IC = 75A, VGE = 15V 150 nC
IE = 75A, VGE = 0V 2.6 Volts
IF = 75A, Clamp Diode Part 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t Load Rise Time t Switch Turn-off Delay Time t Times Fall Time t Diode Reverse Recovery Time** t Diode Reverse Recovery Charge** Q Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies oes res
d(on)
r
d(off)
f
rr
rr
rr
rr
VCE = 10V, VGE = 0V 3.6 nf
VCC = 300V, IC = 75A, 100 ns
V
= V
GE1
GE2
RG = 8.3V, Resistive 200 ns
Load Switching Operation 300 ns IE = 75A, diE/dt = -150A/µs 160 ns IE = 75A, diE/dt = -150A/µs 0.18 µC
IF = 75A, Clamp Diode Part 160 ns
diF/dt = -150A/µs 0.18 µC
= 15V, 250 ns
6.6 nf
––1nf
108
108
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75E3U-12H Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R
Q Per IGBT Module 0.4 °C/W
th(j-c)
D Per FWDi Module 0.9 °C/W
th(j-c)
th(j-c)
Per Module, Thermal Grease Applied 0.035 °C/W
th(c-f)
Clamp Diode Part 0.9 °C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
150
125
100
, (AMPERES)
C
75
50
25
COLLECTOR CURRENT, I
0
10
8
, (VOLTS)
CE(sat)
6
o
Tj = 25
C
VGE = 20V
15
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
Tj = 25°C
IC = 75A
14
(TYPICAL)
13
12
11
10
9 8
IC = 150A
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 30A
150
125
100
, (AMPERES)
C
TRANSFER CHARACTERISTICS
VCE = 10V
= 25°C
T
j
T
= 125°C
j
(TYPICAL)
75
50
25
COLLECTOR CURRENT, I
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V
(TYPICAL)
, (VOLTS)
EC
SATURATION VOLTAGE CHARACTERISTICS
5
)
4
, (VOLTS
CE(sat)
3
COLLECTOR-EMITTER
VGE = 15V
Tj = 25°C T
= 125°C
j
(TYPICAL)
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
0 40 80 120
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
2
10
VGE = 0V f = 1MHz
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
(TYPICAL)
0
10
1
10
160
CE
C
ies
C
oes
C
res
2
10
109
109
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
CM75E3U-12H Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
SWITCHING CHARACTERISTICS
3
10
VCC = 300V V
= ±15V
GE
R
= 8.3
G
T
= 125°C
j
2
10
1
10
SWITCHING TIME, (ns)
0
10
0
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
-3
10
1
th(j-c)
10
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
HALF-BRIDGE
(TYPICAL)
t
d(off)
t
f
t
d(on)
t
r
1
10
TRANSIENT THERMAL
(IGBT)
-2
10
th(j-c)
-1
= 0.4°C/W
REVERSE RECOVERY CHARACTERISTICS
3
10
di/dt = -150A/µsec T
= 25°C
, (ns)
REVERSE RECOVERY TIME, t
2
10
j
rr
2
10
1
10
0
10
IMPEDANCE CHARACTERISTICS
0
10
1
10
-1
10
-2
10
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
(TYPICAL)
t
rr
I
rr
1
EMITTER CURRENT, IE, (AMPERES)
10
TRANSIENT THERMAL
(FWDi)
-2
10
10
th(j-c)
-1
= 0.9°C/W
0
10
2
10
10
, (AMPERES)
rr
1
20
15
, (VOLTS)
GE
10
5
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
2
10
1
10
10
10
0
-1
-2
0 50 100
GATE CHARGE, V
IC = 75A
GATE CHARGE, QG, (nC)
GE
VCC = 200V
VCC = 300V
150 200
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-3
-4
10
10
-3
10
110
110
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