Powerex CM75DY-34A Data Sheet

CM75DY-34A
A
EE
FF
B
N
L
(2 PLACES)
D
M NUTS (3 PLACES)
J
G
G
H
KKK
PPP
T THICK U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
LABEL
C2E1 E2 C1
G2
E2
E1
G1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Dual IGBTMOD™ A-Series Module
75 Amperes/1700 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
£ Low Drive Power £ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
A 3.70 94.0
B 1.89 48.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.67 17.0
F 0.91 23.0
G 0.16 4.0
H 0.71 18.0
J 0.51 13.0
K 0.47 12.0
L 0.26 Dia. Dia. 6.5
M M5 Metric M5
N 0.79 20.0
P 0.63 16.0
Q 0.28 7.0
R 0.83 21.2
S 0.30 7.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
Applications:
£ AC Motor Control £ UPS £ Battery Powered Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM75DY-34A is a 1700V (V
CES
75 Ampere Dual IGBTMOD™ Power Module.
Type Current Rating Amperes Volts (x 50)
CM 75 34
V
CES
),
101/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75DY-34A Dual IGBTMOD™ A-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM75DY-34A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (DC, TC = 111°C)*4 I
Peak Collector Current (Pulse, Repetitive)*2 I
Maximum Collector Dissipation (TC = 25°C, Tj 150°C)*2,*4 P
Emitter Current (TC = 25°C)*2 I
Peak Emitter Current (Pulse, Repetitive)*2 I
Mounting Torque, M5 Main Terminal 30 in-lb
Mounting Torque, M6 Mounting 40 in-lb
Weight 310 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V
–40 to 125 °C
stg
1700 Volts
CES
±20 Volts
GES
75 Amperes
C
150 Amperes
CM
780 Watts
C
*1 75 Amperes
E
*1 150 Amperes
EM
3500 Volts
ISO
Static Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
V
CES
V
GES
I
GE(th)
IC = 75A, VGE = 15V, Tj = 25°C*3 2.2 2.8 Volts
CE(sat)
C
= V
CE
GE
= 7.5mA, VCE = 10V 5.5 7.0 8.5 Volts
C
, VGE = 0V 1.0 mA
CES
= V
, VCE = 0V 2.0 µA
GES
= 75A, VGE = 15V, Tj = 125°C*3 2.45 Volts
Total Gate Charge QG VCC = 1000V, IC = 75A, VGE = 15V 500 nC
Emitter-Collector Voltage VEC*1 I
= 75A, VGE = 0V*3 3.0 Volts
E
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr V
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load 350 ns
Diode Reverse Recovery Time trr*1 Switching Operation, 300 ns
Diode Reverse Recovery Charge Qrr*1 I
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
18.5 nf
ies
V
oes
0.4 nf
res
200 ns
d(on)
V
d(off)
GE1
= 10V, VGE = 0V 2.1 nf
CE
= 1000V, IC = 75A, 150 ns
CC
= V
= 15V, RG = 6.4Ω, 550 ns
GE2
= 75A 7.5 µC
E
rating.
j(max)
2 01/10 Rev. 1
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