CM600HU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
T (2 TYP)
A
D
F
G
S (4 TYP)
N
G
E
H J K
E
C
P
TC MEASURING
POINT
CM
R (2 TYP.)
L
BE
C
Q
Trench Gate Design
Single IGBTMOD™
600 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-connected super-fast recover y freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
E
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.34 +0.04/-0.02 34.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.22 5.5
G 0.57 14.5
H 0.53 13.5
J 0.96 24.5
C
RTC
Dimensions Inches Millimeters
K 1.14 29.0
L 0.37 9.5
N 1.02 +0.04/-0.02 26.0 +1.0/-0.5
P 0.85 21.5
Q 0.16 4.0
RM8 M8
S 0.26 Dia. 6.5 Dia.
TM4 M4
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-24F is a
1200V (V
), 600 Ampere Single
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 600 24
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-24F
Trench Gate Design Single IGBTMOD™
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-24F Units
Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Mounting Torque, M4 T erminal – 15 in-lb
Weight – 600 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
600 Amperes
1200* Amperes
600 Amperes
1200* Amperes
1900 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
GES
GE(th)
CE(sat)
G
EC
VCE = V
VGE = V
, VGE = 0V ––2mA
CES
, VCE = 0V ––80 µA
CES
IC = 60mA, VCE = 10V 5 6 7 Volts
IC = 600A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts
IC = 600A, VGE = 15V, Tj = 125°C – 1.9 – Volts
VCC = 600V, IC = 600A, VGE = 15V – 6600 – nC
IE = 600A, VGE = 0V ––3.2 Volts
rating.
j(max)
2
2