Powerex CM600HG-130H Data Sheet

CM600HG-130H

H

G

F

M8 NUTS
(6 TYP.)

Q(8 TYP.)

M4 NUTS
(3 TYP.)

L

M

C

N

P

C C C

E

C

G
E

E E

F

D D

A

E

B

D

C C C

E E E

E

G

C

J

K K

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 7.48 190.0

B 5.51 140.0

C 1.89 48.0

D 2.24 57.0

E 4.88 124.0

F 0.87 22.0

G 0.47 12.0

H 0.55 14.0

Single IGBTMOD™
HVIGBT Module

600 Amperes/6500 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking

Dimensions Inches Millimeters

J 2.33 59.2

K 2.41 61.2

L 1.61 41.0

M 0.71 18.0

N 1.50 38.0

P 0.20 5.0

Q 0.28 Dia. 7.0 Dia.

baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM600HG-130H is a 6500V
(V

), 600 Ampere Single

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 130

V

CES

15/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600HG-130H
Single IGBTMOD™ HVIGBT Module

600 Amperes/6500 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM600HG-130H Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature T

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 80°C) IC 600 Amperes

Peak Collector Current (Pulse) ICM 1200* Amperes

Emitter Current** (Tc = 25°C) IE 600 Amperes

Emitter Surge Current** (Pulse) IEM 1200* Amperes

Maximum Collector Dissipation (Tc = 25°C, IGBT Part, T

Partial Discharge (V1 = 6900 V

, V2 = 5100 V

rms

, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC

rms

≤ 125°C) PC 8900 Watts

j(max)

Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb

Module Weight (Typical) – 1.35 kg

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V

Maximum Turn-Off Switching Current (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) – 1200 Amperes

Short Circuit Capability, Maximum Pulse Width (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) – 10 μs

Maximum Reverse Recovery Instantaneous Power – 3600 kW
(VCC ≤ 4500V, die/dt ≤ 3000A/μs, Tj = 125°C)

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(oprmax)

rating (125°C).

-40 to 125 °C

stg

-40 to +125 °C

opr

6500 Volts

CES

±20 Volts

GES

10200 Volts

iso

2 5/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600HG-130H
Single IGBTMOD™ HVIGBT Module

600 Amperes/6500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

V

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

I

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 3600V, IC = 600A, VGE = 15V – 9.9 – μC

Emitter-Collector Voltage** VEC I

I

Turn-On Delay Time t

Turn-On Rise Time tr V

Turn-On Switching Energy Eon T

Turn-Off Delay Time t

Turn-Off Fall Time 1 tf1 V

Turn-Off Fall Time 2 tf2 R

Turn-Off Switching Energy E

Reverse Recovery Time 1** t

Reverse Recovery Time 2** t

Reverse Recovery Charge** Qrr T

Reverse Recovery Energy** E

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

VCE = V

CES

= V

CE

I

GE(th)

V

GES

I

CE(sat)

V

ies

f = 100kHz, – 7.6 – nF

oes

T

res

V

d(on)

V

d(off)

T

off

V

rr1

die/dt = -2000A/μs, – 2.4 – μs

rr2

t

rec

= 600A, VGE = 15V, Tj = 25°C – 5.1 – Volts

C

= 600A, VGE = 15V, Tj = 125°C – 5.0 – Volts

C

= 600A, VGE = 0V, Tj = 25°C – 4.0 – Volts

E

= 600A, VGE = 0V, Tj = 125°C – 3.6 – Volts

E

GE1

, VGE = 0V, Tj = 25°C – – 10.0 mA

CES

, VGE = 0V, Tj = 125°C – 30 90.0 mA

CES

= 60mA, VCE = 10V 5.0 6.0 7.0 Volts

C

= V

GE

CE

= 3600V, IC = 600A, – 1.2 – μs

CC

= -V

GE2

= 125°C, t

j

= 3600V, IC = 600A, – 6.6 – μs

CC

GE1

= 125°C, t

j

= 3600V, IE = 600A, – 1.0 – μs

CC

, VCE = 0V – – 0.5 μA

GES

= 10V, VGE = 0V, – 124 – nF

= 25°C – 2.2 – nF

j

= 15V, R

off

= -V

GE2

= 24Ω, – 3.3 – μs

G(off)

off

= 125°C, – 1100 – μC

j

= 60μs – 2.0 – J/P

off

= 10Ω, – 0.35 – μs

G(on)

= 60μs – 4.5 – J/P

= 15V, – 0.5 – μs

= 60μs – 3.5 – J/P

Thermal Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, Case to Fin R

Q Per IGBT – – 14.0 K/kW

th(j-c)

D Per FWDi – – 22.0 K/kW

th(j-c)

Per Module, Thermal Grease Applied – 6.0 – K/kW

th(c-f)

Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Comparative Tracking Index CTI – 600 – – –

Clearance – – 26.0 – – mm

Creepage Distance – – 56.0 – – mm

Internal Inductance L

Internal Lead Resistance R

– – 18 – nH

C-E(int)

– – 0.18 – mΩ

C-E(int)

35/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

1000

2000

3000

0

6000

02012 1648

COLLECTOR-EMITTER VOLTAGE, V

CE(sat)

, (VOLTS)

Tj = 25°C

4000

5000

VGE = 20V

18V

12V

13V

14V

15V

10V

16V

1

2

3

0

8

7

6

FREE-WHEEL DIODE FORWARD

CHARACTERISTICS (TYPICAL)

0 1400600 800 1000 1200200 400

VGE = 0V

Tj = 25°C
T

j

= 125°C

4

5

COLLECTOR-EMITTER VOLTAGE, V

CES

, (VOLTS)

EMITTER CURRENT, IE, (AMPERES)

0.5

1.0

1.5

0

3.5

3.0

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

0 1400600 800 1000 1200200 400

VCC = 3600V
V

GE

= ±15V

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

2.0

2.5

REVERSE RECOVERY ENERGY, E

rec

, (J/PULSE)

EMITTER CURRENT, IE, (AMPERES)

0.5

1.0

1.5

0

3.5

3.0

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

04015 20 25 3530510

VCC = 3600V
V

GE

= ±15V

I

C

= 600A

L

S

= 150nH

T

j

= 125°C

2.0

2.5

REVERSE RECOVERY ENERGY, E

rec

, (J/PULSE)

GATE RESISTANCE, RG, (Ω)

04015 20 25 3530510

VCC = 3600V
V

GE

= ±15V

I

C

= 600A

L

S

= 150nH

T

j

= 125°C

GATE RESISTANCE, RG, (Ω)

0.5

1.0

1.5

0

3.5

3.0

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

0 1400600 800 1000 1200200 400

VCC = 3600V
V

GE

= ±15V

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

2.0

2.5

REVERSE RECOVERY CHARGE, Q

rr

, (J/PULSE)

EMITTER CURRENT, IE, (AMPERES)

0.5

1.0

1.5

0

3.5

3.0

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

2.0

2.5

REVERSE RECOVERY CHARGE, Q

rr

, (J/PULSE)

COLLECTOR CURRENT, I

C

, (AMPERES)

840201612

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

(TYPICAL)

0

2000

12000

10000

6000

4000

8000

Tj = 25°C
T

j

= 125°C

V

CE

= 5V

SWITCHING TIME, t

d(on)

, (ns)

TURN-ON DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

10

1

10

0

10

-1

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING TIME, t

d(off)

, (ns)

TURN-OFF DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

VCC = 3600V
V

GE

= ±15V

R

G(off)

= 24Ω

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

VCC = 3600V
V

GE

= ±15V

R

G(off)

= 24Ω

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

10

2

10

4

10

3

10

1

10

0

10

-1

COLLECTOR CURRENT, I

C

, (AMPERES)

10

2

10

4

10

3

CM600HG-130H
Single IGBTMOD™ HVIGBT Module

600 Amperes/6500 Volts

4 5/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, t

f

, (ns)

FALL TIME VS.

COLLECTOR CURRENT

(TYPICAL)

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, t

r

, (ns)

RISE TIME VS.

COLLECTOR CURRENT

(TYPICAL)

10

6

8

4

0

2

1400800 12001000400 600200

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

off

, (mJ/PULSE)

SWITCHING LOSS (OFF) VS.

COLLECTOR CURRENT

(TYPICAL)

0

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

on

, (mJ/PULSE)

SWITCHING LOSS (ON) VS.

COLLECTOR CURRENT

(TYPICAL)

SWITCHING LOSS, E

off

, (mJ/PULSE)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

on

, (mJ/PULSE)

GATE RESISTANCE, RG, (Ω)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (pF)

10

-1

10

0

10

1

10

2

CAPACITANCE VS.

COLLECTOR-EMITTER VOLTAGE

(TYPICAL)

10

3

10

1

10

0

10

2

C

ies

C

oes

C

res

VGE = 15V
f = 100kHz
T

j

= 25°C

TIME, (s)

TRANSIENT IMPEDANCE, Rth

(j-c)

10

-3

10

-2

10

-1

10

0

10

1

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDI)

1.2

1.0

0.4

0

0.2

0.6

0.8

SINGLE PULSE
T

C

= 25°C

IGBT = R

th(j-c)

Q =
14°K/kW
FWDI = R

th(j-c)

D =

22°K/kW

COLLECTOR-EMITTER VOLTAGE, V

CES

, (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

VCC = 3600V
V

GE

= ±15V

R

G(off)

= 24Ω

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

10

1

10

0

10

-1

10

2

10

4

10

3

VCC = 3600V
V

GE

= ±15V

R

G(off)

= 24Ω

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

VCC = 3600V
V

GE

= ±15V

R

G(off)

= 24Ω

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

10

6

8

4

0

2

1400800 12001000400 6002000

VCC = 3600V
V

GE

= ±15V

R

G(off)

= 24Ω

R

G(on)

= 10Ω

L

S

= 150nH

T

j

= 125°C

10

6

8

4

0

2

4020 30 352510 1550

VCC = 3600V
V

GE

= ±15V

I

C

= 600A

L

S

= 150nH

T

j

= 125°C

10

6

8

4

0

2

4020 30 352510 1550

VCC = 3600V
V

GE

= ±15V

I

C

= 600A

L

S

= 150nH

T

j

= 125°C

10

1

10

0

10

-1

10

2

10

4

10

3

1

2

3

0

8

7

6

0 1400600 800 1000 1200200 400

VGE = 0V

Tj = 25°C
T

j

= 125°C

4

5

SWITCHING LOSS (OFF) VS.

GATE RESISTANCE

(TYPICAL)

SWITCHING LOSS (ON) VS.

GATE RESISTANCE

(TYPICAL)

CM600HG-130H
Single IGBTMOD™ HVIGBT Module

600 Amperes/6500 Volts

55/08