POWEREX CM600HA-24H Datasheet
CM600HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
C
Y - THD (2 TYP.)
E
ED
T
X - DIA.
(4 TYP.)
H
W
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57 40.0
F 1.42 Max. 36.0 Max.
G 1.14 29.0
H 1.00 Max. 25.5 Max.
J 0.96 25.0
K 0.94 24.5
L 0.83 21.0
M 0.71 18.0
U
G
Q
E
E
L G
J J
S
M
C
N
Z
Dimensions Inches Millimeters
N 0.69 17.5
P 0.61 15.5
Q 0.51 13.0
R 0.49 12.5
S 0.45 11.5
T 0.43 11.0
U 0.35 9.0
V M8 Metric M8
W 0.28 7.0
X 0.256 Dia. Dia. 6.50
Y M4 Metric M4
Z 0.12 3.04
R
K
P
V - THD
(2 TYP.)
F
C
B
Single IGBTMOD™
H-Series Module
600 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recover y
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM600HA-24H
is a 1200V (V
Single IGBTMOD™ Power Module.
Type Current Rating V
CM 600 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 600 Ampere
CES
Amperes Volts (x 50)
CES
193
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-24H
Single IGBTMOD™ H-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HA-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 560 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
600 Amperes
1200* Amperes
600 Amperes
1200* Amperes
4100 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 2.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 600A, VGE = 15V – 2.5 3.4** Volts
A
IC = 600A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 600A, VGS = 15V – 3000 – nC
IE = 600A, VGS = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 42 nF
VCC = 600V, IC = 600A, – – 700 ns
V
= V
GE1
= 15V, RG = 2.1Ω – – 450 ns
GE2
IE = 600A, diE/dt = –1200A/µs – – 250 ns
IE = 600A, diE/dt = –1200A/µs – 4.46 –
– – 120 nF
–– 24nF
– – 300 ns
– – 350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.035 °C/W
Per IGBT – – 0.035 °C/W
Per FWDi – – 0.06 °C/W
194
Loading...